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Showing 1 to 20 of 76 for “"chemical etching"”.

  1. Metal-assisted chemical etching of 4H silicon carbide

    Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by …

    uiuc Repository record for Metal-assisted chemical etching of 4H silicon carbide (opens in a new tab)

  2. Metal-assisted chemical etching of β-gallium oxide

    … surface due to high-energy ions, while most wet etching techniques can only produce very limited aspect ratios. In this thesis, β-Ga2O3 fin arrays by inverse metal-assisted chemical etching (MacEtch), under UV light irradiation, with a high aspect ratio and excellent surface quality, are …

    uiuc Repository record for Metal-assisted chemical etching of β-gallium oxide (opens in a new tab)

  3. Metal-assisted chemical etching of semiconductor nanostructures for electronic applications

    Metal-assisted Chemical Etching (MacEtch) is a robust and versatile top-down etching process which has the capability of overcoming the limits of conventional wet and dry etching. The advantage of producing anisotropic high aspect ratio micro- and nanostructures with the absence of ion induced …

    uiuc Repository record for Metal-assisted chemical etching of semiconductor nanostructures for electronic applications (opens in a new tab)

  4. Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications

    Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07

    uiuc Repository record for Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications (opens in a new tab)

  5. Metal-assisted chemical etching of β-gallium oxide and its device applications

    Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-12-01

    uiuc Repository record for Metal-assisted chemical etching of β-gallium oxide and its device applications (opens in a new tab)

  6. Metal-assisted chemical etching as a disruptive platform for multi-dimensional semiconductor sculpting

    The student, Karthik Balasundaram, submitted this Dissertation for approval on 2015-06-18 at 16:07.

    uiuc Repository record for Metal-assisted chemical etching as a disruptive platform for multi-dimensional semiconductor sculpting (opens in a new tab)

  7. Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability

    Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a …

    uiuc Repository record for Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability (opens in a new tab)

  8. Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication

    … modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes …

    uiuc Repository record for Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication (opens in a new tab)

  9. Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching

    … of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy …

    mit Repository record for Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching (opens in a new tab)

  10. The growth characteristics of indium antimonide as revealed by chemical etching and x-ray anomalous transmission.

    Thesis: Ph. D., Massachusetts Institute of Technology, Department of Metallurgy and Materials Science, 1970

    mit Repository record for The growth characteristics of indium antimonide as revealed by chemical etching and x-ray anomalous transmission. (opens in a new tab)

  11. Nonlithographic manufacturing of 1-D silicon nanostructures with tunable surface morphology via thermal dewetting and metal-assisted chemical etching

    … on Si substrates. Followed by metal-assisted chemical etching (MacEtch), where the Au mesh serves as catalyst, arrays of smooth Si nanowires with tunable taper are produced. By using the Le Chatelier Principle, the rate of reduction relative to that of oxidation is increased by adding …

    uiuc Repository record for Nonlithographic manufacturing of 1-D silicon nanostructures with tunable surface morphology via thermal dewetting and metal-assisted chemical etching (opens in a new tab)

  12. Tikslinis fotovoltinių silicio prietaisų savybių keitimas, panaudojant gilų paviršiaus tekstūrinimą ir dvimatės medžiagos dangas /

    … surface modification using metal-assisted chemical etching and CVD grown two-dimensional material coatings. The modifications were performed with photovoltaic devices in mind. Single-step copper-assisted chemical etching was used to texture the silicon surface, which allowed control over …

    vilnius Repository record for Tikslinis fotovoltinių silicio prietaisų savybių keitimas, panaudojant gilų paviršiaus tekstūrinimą ir dvimatės medžiagos dangas / (opens in a new tab)

  13. Effects of solvents on thermotropic liquid crystalline copolyesters

    … percent up to 80 mole percent. The technique of chemical etching coupled with SEM and WAXS was utilized to obtain structural information. Morphological changes that occur when these materials are exposed to solvents such as dioxane or acetone and dye carriers were also studied using SEM. Electron …

    vt Repository record for Effects of solvents on thermotropic liquid crystalline copolyesters (opens in a new tab)

  14. Evaluating the Ability of Different Weak Acids When Combined with Hydrogen Peroxide to Develop Latent Fingerprints on Post-Fired Cartridge Cases

    … with hydrogen peroxide due to a process known as chemical etching. Chemical etching involves an oxidation-reduction in which the metal is oxidized by the acid. Three types of cartridge cases were used: bi-metal, brass, and aluminum. Five different acids of varying pKa were used: acetic, citric, …

    wvu Repository record for Evaluating the Ability of Different Weak Acids When Combined with Hydrogen Peroxide to Develop Latent Fingerprints on Post-Fired Cartridge Cases (opens in a new tab)

  15. Fabrication of nanofluidic devices using electrochemical etching of sacrificial copper

    … capabilities for analyzing fluid samples in chemical and biological research. A method of creating nanofluidic systems with integrated sensor electrodes is presented with a detailed description of the fabrication process. Devices were built by creating nanometer scale copper channels on glass …

    uiuc Repository record for Fabrication of nanofluidic devices using electrochemical etching of sacrificial copper (opens in a new tab)

  16. Surface kinetics modeling of silicon oxide etching in fluorocarbon plasmas

    Fluorocarbon plasma for silicon oxide etching is a complicated system involving many ion and neutral species. Depending on the plasma condition, many difficulties arise such as RIE lag, etch stop, and low selectivity to photoresist. For a better understanding of the process it is necessary to have …

    mit Repository record for Surface kinetics modeling of silicon oxide etching in fluorocarbon plasmas (opens in a new tab)

  17. Evaluations of concrete overlays for bridge deck applications

    … preparation conditions: Mechanical abrasion and chemical etching.;The results show that FRC had the highest compressive and split tensile strengths, and MMC and MMC-FA had very low chloride permeability values, while LMC exhibited extremely high interface bond strength. The surface preparation …

    wvu Repository record for Evaluations of concrete overlays for bridge deck applications (opens in a new tab)

  18. Design, fabrication, and characterization of a wideband microwave balun

    … pattern was formed on the board using the chemical etching process. The fabricated balun is measured and evaluated in both the time domain and frequency domain, indicating a 5 GHz bandwidth. The time domain modeling technique is used to characterize the balun's performance. Based on …

    vt Repository record for Design, fabrication, and characterization of a wideband microwave balun (opens in a new tab)

  19. Synthesis and Characterization of Functional Mesostructures Using Colloidal Crystal Templating

    … via colloidal crystal templating, and their chemical, physical, and optical properties were characterized. By forming colloidal crystals through self-organization, infiltrating the interstitial space with functional materials, and removing the templates by chemical etching, inverse opal …

    uiuc Repository record for Synthesis and Characterization of Functional Mesostructures Using Colloidal Crystal Templating (opens in a new tab)

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