Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 38 for “"charge trapping"”.
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Charge trapping instabilities in amorphous silicon/silicon nitride thin film transistors
Charge trapping phenomena within amorphous silicon-silicon nitride TFTs have been characterised in an extensive study. A new experimental technique has been developed and applied in conjunction with the standard measurement of threshold voltage.<br/><br/>The new technique reveals two electron …
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Evaporative printing of organic materials and metals and development of organic memories
… In the second part of the thesis we examine charge trapping and storage in organic thin film devices. We demonstrate that by controlled doping, we can engineer charge storage in active organic electronic devices. Charge trapping in organic hetero-junction structures results in two distinct …
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Towards high performance graphene nanoelectronics: materials, contacts and interfaces
… current degrades, suggesting the presence of charge trapping mechanisms. These charge trapping effects produce threshold voltage instability (hysteresis) in the current-voltage characteristics. We find that with nanosecond-range pulsed operation, hysteresis can be suppressed and reliable …
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Generation of photocurrent from Photosystem I biomolecular complexes
… and then fail upon subsequent illumination. A charge trapping mechanism is postulated to cause the failure. Nonetheless, the devices hold enormous potential and the preliminary results show that research in this area will be fruitful, even though evaporation of protective layers does not …
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Reliability Characterisation of III-Nitrides Based Devices for Technology Development
… of AlGaN/GaN HEMTs, namely self-heating, charge trapping and strain, are required to be minimised; an important step before large-scale deployment can be attained. The strong coupling of these degradation mechanisms, under normal device operation, makes the quantitative contribution of …
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… this thesis, investigation into border traps (or charge trapping) and interface states, both of which can induce device instability, in HfO2/InGaAs and Al2O3/InGaAs metal-oxidesemiconductor (MOS) structures was carried out with an emphasis on the characterization of border traps using …
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Floating gate engineering for novel nonvolatile flash memories
… or ruthenium nanocrystals buried in HfO₂ as charge storage nodes, high interface quality has been achieved, leading to promising memory device performance. Next, another crucial challenge for nanocrystal flash memory on how to deposit uniformly distributed nanocrystal matrix in good shape and …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… thesis intends to categorize different types of charge trapping effects at the oxide/semiconductor interface and highlight their influence on the device performance. The approach to identify and separate the influence of different oxide traps is suggested based on electrical characterization …
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Materials, methods and concepts for 21st century solar cells
… thickness, better back reflection and reduced charge trapping. However, photon recycling reduces and device performance increases for better light management. Photon recycling is also found to be significantly more important in LEDs than solar cells at operating voltages. Chapter 7 calculates …
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Characterization of pGaN-gate power HEMTs
… uncovered dynamic Ron degradation behavior and charge trapping effects, especially under high drain bias conditions. Extracted time constants demonstrated process-dependent trends, with wafers retaining more of the p-GaN surface exhibiting slower charge detrapping and more severe transient …
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Molecular Beam Epitaxy Synthesis and Characterization of Indium Selenide Films
… temperature hysteresis on this device arose from charge trapping rather than ferroelectricity. Hysteresis in all devices occurred in a clockwise direction, which could be expected for ferroelectricity in an FeSFET with the device dimensions used in this study. Stepwise increase in the VGS sweep …
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Fabrication and application of a novel four-terminal hybrid organic/inorganic field-effect transistor for volatile organic compounds sensing
… conditions are given as well. Additionally, the charge trapping mechanisms occurring during the sensing events are investigated. It is found that the charge mobilities are drastically reduced by more than 1/7 of their initial values, whereas the threshold voltages are only slightly affected. The …
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Oxide charge traps and interface states at the silicon-silicon dioxide interface
… the effects of oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or …
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Water stability of organic and electrolyte-gated field-effect transistors
… However, water constitutes a key factor in charge trapping and device degradation in organic materials, due to its strong dipole moment, high dielectric constant, and its omnipresence in almost all processing, environmental, and operational conditions. In this dissertation, we used an …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
… progressive degradation likely associated with charge trapping and thermally induced mobility reduction. Results show that RDS (on) is a meaningful degradation indicator, supporting both reliability assessment and the development of prognostics and health management strategies for GaN power …
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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
Silicon nanoparticles are candidate charge trapping and storage elements for future high density, low-voltage nonvolatile memory devices. Most previous works have studied nanoparticles of larger than 5 nm size and exhibited bulk-like trapping characteristics. Technologically viable and competitive …
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Electrical characterization of EEPROM test structures
… the barrier width is locally widened due to charge trapping in the oxide. This model is based on the interpretation of the non-linear FN curves, which leads to a failure mechanism that may be dependent on the tunneling current density. As the EEPROM test structure is stressed, the trapped …
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Electrical and thermal characterization techniques for carbon nanotube transistors and networks
… Time constants associated with environmental charge trapping, at various ambient temperatures from 80 to 453 K are extracted. Hysteresis dependence of pulsed measurements is compared under air, high-temperature, and vacuum conditions. Using such measurements we investigate the error on carrier …
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Neural Network Methods for Improving Signal Processing in High-Purity Germanium Detectors for Rare Event Searches
… The full chain from drift time estimation to charge trapping correction is demonstrated on real detector data. The model's latent representation is also used for unsupervised pulse-shape clustering, where it resolves finer distinctions between waveform populations than clustering on raw data, …
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Synthesis and characterization of electronic materials for photovoltaic applications
… However, due to incomplete pathways for charge transport and poor interfaces between materials, charge trapping and exciton recombination is often high. In an effort to alleviate these problems, we have developed an approach to fabricate bulk heterojunction materials via a seeded growth …
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