Global ETD Search
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Showing 1 to 4 of 4 for “"cdte(100)"”.
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Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures
… light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn …
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Core-Level Photoemission Investigations of the Cadmium-Telluride(100) and Indium-Antimony(100) Surface and Interfacial Structures
… light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(100)-Ag interface, the CdTe(100)-Sb system, and the InSb(100)-Sn …
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Engineering of electroplated materials for multilayer next generation graded bandgap solar cells
… and increase the conversion efficiency of CdS/CdTe-based solar cells using multilayer graded bandgap configurations. To effect economic viability, electroplating technique was utilised as the low-cost semiconductor deposition technique. CdS and CdTe are the primary materials grown and explored …
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Optische Charakterisierung von II-VI-Halbleiter-Oberflächen in Kombination mit First-Principles-Rechnungen
… konnten erfolgreich am Beispiel der reinen BeTe(100)-Oberfläche mit den experimentell mit der UHV-Ramanspektroskopie beobachteten Frequenzen verglichen werden. So gelang erstmalig die optische identifizierung von rekonstruktionsinduzierten Eigenschwingungen einer Oberfläche. Nach detaillierter …