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Showing 1 to 6 of 6 for “"cascode GaN"”.
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) …
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… can dissipate surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a …
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Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride (GaN) Devices for Bidirectional DC–DC Converters
… (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior physical properties and demonstrate great potential for replacing conventional Si semiconductors with WBG technology, pushing the boundaries of power devices to handle higher switching frequencies, …
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Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
… power conversion. The switching performance of cascode GaN HEMT is studied at first. An accurate behavior-level simulation model is developed with comprehensive consideration of the impacts of parasitics. Then based on the simulation model, detailed loss breakdown and loss mechanism analysis are …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance …
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High Frequency GaN Characterization and Design Considerations
… supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance than silicon MOSFETs and, therefore, are capable of operating at a switching frequency 10 times greater. This can significantly impact the power density of power converters, …