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Showing 1 to 10 of 10 for “"carrier induced"”.

  1. Modeling and simulation of hot-carrier induced device and circuit degradation for VLSI reliability

    … approach is presented for estimating the hot-carrier induced degradation of MOSFET device characteristics and circuit performance. The proposed simulation tool provides information on (i) the evolution of device and circuit performance degradation during long-term dynamic operation, (ii) the …

    uiuc Repository record for Modeling and simulation of hot-carrier induced device and circuit degradation for VLSI reliability (opens in a new tab)

  2. The Effect Of Hot Carrier Stress On Low Noise Amplifier Radio Frequency Performance Under Weak And Strong Inversion

    … a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF …

    ucf

  3. Exciton transport and thermodynamics in gallium arsenide quantum wells

    … quantum well systems. I discuss the mechanism of carrier-induced changes in the absorption spectrum of a 210A GaAs multiple quantum well, and show that at moderate densities, the enhanced transmission at the heavy-hole exciton energy is due to collision broadening. I also discuss the time …

    uiuc Repository record for Exciton transport and thermodynamics in gallium arsenide quantum wells (opens in a new tab)

  4. Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit

    Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily …

    ucf

  5. Real-Time Dynamics of Electrons and Phonons from First Principles

    … thermalization and enabling identification of carrier-induced screening effects. In addition, a first-principles theory of coherent phonon damping is developed using many-body perturbation theory, demonstrating that phonon frequency renormalization and decay are governed by the phonon …

    cau-kiel Repository record for Real-Time Dynamics of Electrons and Phonons from First Principles (opens in a new tab)

  6. Many-body entanglement : topological orders, tensor networks and superconductivity

    … but statistical confusion of charge carrier induced by strong many-body entanglement. This may open new doors for identifying and constructing new superconducting states.

    mit Repository record for Many-body entanglement : topological orders, tensor networks and superconductivity (opens in a new tab)

  7. A study of CMOS technologies for image sensor applications

    … conditions. (b) The mechanism of hot-carrier induced excess minority carriers occurred at the in-pixel transistors is identified and investigated. The influence of the excess carriers on imager performance is analyzed. Suggestions on the pixel design are provided. (c) Signal cross-talk …

    mit Repository record for A study of CMOS technologies for image sensor applications (opens in a new tab)

  8. Atomic -Scale Statistical Models of Semiconductor Device *Reliability

    We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic …

    uiuc Repository record for Atomic -Scale Statistical Models of Semiconductor Device *Reliability (opens in a new tab)

  9. Atomic Scale Statistical Models of Semiconductor Device Degradation

    We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic …

    uiuc Repository record for Atomic Scale Statistical Models of Semiconductor Device Degradation (opens in a new tab)

  10. Integrated Inp Photonic Switches

    Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice …

    ucf