Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 15 of 15 for “"carbon-doped"”.

  1. Growth and Characterization of Carbon-Doped Aluminum(x) Gallium(1-X) Arsenide and Aluminum(x) Gallium(1-X) Phosphide

    Carbon-doped GaAs and Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As with carbon concentrations ranging from 2 $\times$ 10$\sp $ cm$\sp{-3}$ to 3 $\times$ 10$\sp{20}$ cm$\sp{-3}$ have been characterized with Hall effect measurements, secondary ion mass spectrometry (SIMS), double crystal x-ray diffraction and …

    uiuc Repository record for Growth and Characterization of Carbon-Doped Aluminum(x) Gallium(1-X) Arsenide and Aluminum(x) Gallium(1-X) Phosphide (opens in a new tab)

  2. Zero-field time-of-flight characterization of minority carrier transport in heavily carbon-doped gallium arsenide and indium gallium arsenide

    Heavily doped p-type GaAs is important for both optical and electronic devices, and recently carbon has become the preferred base dopant for AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) due to its high solubility and low diffusivity in GaAs. The low diffusivity of carbon, …

    uiuc Repository record for Zero-field time-of-flight characterization of minority carrier transport in heavily carbon-doped gallium arsenide and indium gallium arsenide (opens in a new tab)

  3. Understanding non-precious metal catalysts for the oxygen reduction reaction and investigating corrosion and surface properties of carbon-doped aluminum alloys

    … properties of a new type of Al alloy into which carbon has been added via a new processing method. Together, these studies provide important direction for further research and development of sustainable technologies. Due to the decreasing supply and environmental impact of fossil fuels as a …

    uiuc Repository record for Understanding non-precious metal catalysts for the oxygen reduction reaction and investigating corrosion and surface properties of carbon-doped aluminum alloys (opens in a new tab)

  4. Growth and chemical characterisation studies of Mn silicate barrier layers on SiO2 and CDO

    … grown SiO2 and a low dielectric constant carbon doped oxide (CDO), with the focus of understanding the barrier formation process. The self forming nature of this diffusion barrier layer resulting from the chemical interaction of deposited Mn with the insulating substrate has potential …

    dcu Repository record for Growth and chemical characterisation studies of Mn silicate barrier layers on SiO2 and CDO (opens in a new tab)

  5. Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride

    … in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$\sb4$ doping and to provide experimental parameters for the …

    uiuc Repository record for Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride (opens in a new tab)

  6. Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors

    … the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth temperature of the device causes both hydrogen removal from the base and carbon-related defect formation. This effect is caused by the amount of …

    uiuc Repository record for Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors (opens in a new tab)

  7. Scaling Carbon-Cement Supercapacitors for Energy Storage Use-Cases

    … structurally integrated supercapacitors based on carbon-doped cement composites, known as EC3 cells. These multifunctional materials combine structural performance with electrochemical energy storage capabilities, enabling integration directly into civil infrastructure. The research focuses on …

    mit Repository record for Scaling Carbon-Cement Supercapacitors for Energy Storage Use-Cases (opens in a new tab)

  8. Application of novel gate materials for performance improvement in flash memory devices

    … A novel floating gate engineering scheme using carbon doped polysilicon floating gate is proposed to overcome the scaling barrier for floating gate-type flash memory devices. It has been found that incorporating carbon into conventional n+ polysilicon floating gate will be able to significantly …

    nus Repository record for Application of novel gate materials for performance improvement in flash memory devices (opens in a new tab)

  9. Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C

    Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below …

    vt Repository record for Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C (opens in a new tab)

  10. A study of carbon and iron charged point defects in gallium nitride: electronic structure implications for high-power photoconductive solid state switch applications

    … GaN may influence and enhance its prop- erties. Carbon doping of GaN is potentially efficient and useful material for photo-conductive solid-state switches (PCSSs), also called photo-conductive semiconductor switches. However, to make effective use of the rich capa- bilities of device-scale …

    umkc Repository record for A study of carbon and iron charged point defects in gallium nitride: electronic structure implications for high-power photoconductive solid state switch applications (opens in a new tab)

  11. Transparent Tissues and Porous Thin Films: A Brillouin Light Scattering Study

    … dielectric constant (k) hybrid organic-inorganic carbon doped SiO2 (SiOC:H) and amorphous carbon (a-C:H) interconnect layers with controlled levels of porosity have been pursued. However, increased porosity coupled with reduced film thicknesses (<100nm) could potentially reduce device …

    ohiolink Repository record for Transparent Tissues and Porous Thin Films: A Brillouin Light Scattering Study (opens in a new tab)

  12. Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

    … often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the present research is to investigate the fundamental surface interactions between …

    unt Repository record for Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration (opens in a new tab)

  13. Probing interfacial electronic structure in quantum materials using stem cathodoluminescence spectral imaging

    … 440 nm and correlation to a vertically aligned carbon dimer in thin regions of twisted hBN at approximately ten nanometer spatial resolution. Guided by this critical insight, we demonstrate deterministic, site-selective creation of blue centers by depositing a carbon overlayer and by applying …

    uiuc Repository record for Probing interfacial electronic structure in quantum materials using stem cathodoluminescence spectral imaging (opens in a new tab)

  14. Co-reactant interactions with CVD surfaces: Activation or passivation of growth

    … temperature growth of superconductive molybdenum carbonitrides from metal-carbonyl precursor and ammonia. In the second part, I show how co-reactants can selectively passivate CVD reactions and result in area-selective deposition. Many nanoscale electronic devices are fabricated using a top-down …

    uiuc Repository record for Co-reactant interactions with CVD surfaces: Activation or passivation of growth (opens in a new tab)

  15. Efecto del vapor de agua en la adsorción de CO2 postcombustión

    … de alcanzar la neutralidad de emisiones de carbono entre 2050-2100. Esta situación requerirá contar con todas las tecnologías de mitigación disponibles en el periodo de transición. Una de las principales formas de mitigar las emisiones de CO₂ de grandes fuentes estacionarias son las …

    oviedo Repository record for Efecto del vapor de agua en la adsorción de CO2 postcombustión (opens in a new tab)