Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"carbon impurities"”.
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Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
… been taken to understand the effects of hydrogen impurities in semiconductors and its behavior such as incorporation, diffusion, trapping and release with the aim of controlling and using it to optimize the performance of electronic device structures. In this dissertation, a systematic study of …
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Polarization, passivation, intercalation, and generation: an examination of In-Situ and Ex-Situ analytical techniques for the study of carbon anode materials for the electrochemical generation of elemental fluorine.
… and fluorine gas. This work examines various carbon materials for their use as electrodes in the electrochemical generation of elemental fluorine. An experimental apparatus was designed and constructed to melt and maintain the temperature of the KF·2HF electrolyte in a suitable range for …
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Aerosol carbon nanotube production via scalable microplasma synthesis of catalyst nanoparticles
The exceptional properties of individual carbon nanotubes (CNTs) have long indicated their potential for a range of practical applications. Yet, the challenge of synthesizing ordered assemblies of high quality CNTs limits the ability to fully translate those properties into macroscale structures. …
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Generation and Langmuir probe analysis of a DC glow discharge and the deposition of chromium from a carbonyl precursor
… to deposit chromium metal from a chromium hexacarbonyl precursor (Cr(C0)6). New diagnostic equipment was designed, tested and implemented to record Langmuir probe data with high resolution and accuracy. A monochromator was employed to record the light emission from the plasma. This identified …
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Synthesis and characterization of mechanically alloyed aluminum-based compounds as high energy density materials
… of aluminum and titanium carbides with the carbon impurities coming from the stearic acid added to the mechanically alloyed powders as a process control agent. Three distinguishable oxidation steps were observed for the prepared alloys. The products formed at different oxidation stages were …
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Low Carbon n-GaN Drift Layers for Vertical Power Electronic Devices
… reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia …