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Showing 1 to 14 of 14 for “"capacitance voltage measurements"”.
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Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
… technique with the time-dependent high-frequency capacitance-voltage measurements.
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Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
… body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) …
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Study of deep level defects of N+-CdS/P-CdTe solar cells
… excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of …
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Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment
… investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and …
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Elucidating efficiency losses in cuprous oxide (Cu₂O) photovoltaics and identifying strategies for efficiency improvement
… spectroscopy, quantum efficiency, current-voltage, and capacitance-voltage measurements. Then, these devices were modeled using SCAPS-1D, a numerical simulation package, as well as MATLAB for analytical solutions. This simulation enabled a quantitative breakdown of efficiency losses in Cu …
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Electroabsorption spectroscopy of quasi-one-dimensional organic molecular crystals
… setup, two kinds of electroabsorption measurements, called "perpendicular" and "parallel" measurements, were conducted at room temperature in ambient air. The crystalline texture of PTCDA and MePTCDI thin film samples are characterized by X-ray diffraction …
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Design of band-engineered photocatalysts using TiO2
… Electrical characterization of the films by capacitance-voltage measurements and ultraviolet photoelectron spectroscopy, together with detailed physical characterization by a variety of other techniques, confirm this picture.
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Properties and device applications of silicon and silicon-germanium nanostructures with different dimensions
… (HJs). Raman scattering and photoluminescence measurements show that by alternating heavily boron-doped layers with layers of undoped Si in Si/Si:B multilayers, dopant segregation and strain can be avoided. Current-voltage and capacitance-voltage measurements show Schottky-barrier-like …
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Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
… which has the potential to minimize threshold voltage variation due to reduced random dopant fluctuations. However, there is little known about carrier mobility in Si nanowire MOSFETs. Because of the different crystal surface orientations, the nanowire sidewalls are expected to influence …
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Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs
There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for …
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A Schottky-to-Ohmic Transition in Epitaxial Ferroelectric Hafnia Devices
… Schottky-to-Ohmic transition (SOT). A series of voltage pulse trains were used to explore the intermediate resistance states of the system. Both analog and integration behaviour was demonstrated, depending on the pulse profile. The SOT may therefore find application as both a synapse and a neuron …
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The effects of ion bombardment on the chemical reactivity of GaAs(100)
… region (1.6-5.6 eV), Raman spectroscopy, and capacitance-voltage measurements. Ion bombardment forms a damaged layer that is amorphous. The depth of damage is proportional to the energy of the bombarding ion and inversely proportional to the mass of the bombarding ion. The shallow damage depth …
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Aqueous-Derived Thin Films and their Interfacial Interactions with Semiconductor Surfaces: A Spectroscopic Study
… of annealing temperature, with electrical measurements used as a metric to quantify the effectiveness of the SAM layer to alleviate issues of interfacial defects observed for films on silicon oxide. The results are presented in three parts: (1) a dehydration study of aqueous-derived thin …
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Suspended Gate Silicon Nanodot Memory
… node and vice versa as a function of the applied voltage (bias). The tunnelling process is numerically analysed by implementing the Tsu-Esaki equation and the transfer matrix method within a homemade program which calculates the current density as a function of the tunnel oxide material and …