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Showing 1 to 6 of 6 for “"bottom-up growth"”.

  1. Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01

    uiuc Repository record for Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy (opens in a new tab)

  2. Template-based control for bottom-up nanostructures - multilayer block copolymer graphoepitaxy and masked ZnO nanowire growth

    … self-assembly (DSA) mutually benefits both bottom-up growth and top-down nanofabrication. This thesis investigates templated control over the alignment and morphology of two bottom-up nanostructures, ZnO nanowires (NWs) and cylinder-forming block copolymers (BCPs). Despite material …

    mit Repository record for Template-based control for bottom-up nanostructures - multilayer block copolymer graphoepitaxy and masked ZnO nanowire growth (opens in a new tab)

  3. Extending broadband past the urban fringe with wireless mesh : a strategic analysis with policy implications for Kenya's Universal Service Fund

    … networks as a means to implement demand-driven, bottom-up growth of broadband infrastructure on the outskirts of Nairobi, Kenya. Under the hypothesis that current conditions are not attractive to small scale operators (SSO), we develop a continuous growth model to understand the investment …

    mit Repository record for Extending broadband past the urban fringe with wireless mesh : a strategic analysis with policy implications for Kenya's Universal Service Fund (opens in a new tab)

  4. Exploring valleytronics in 2D transition metal dichalcogenides

    … optical properties according to the relative occupation of each of two valleys in their dispersion relation. The resulting valley degree of freedom is robust, linked to a large spin-orbit splitting between valence bands, and shows promise in electro-optical devices or as an information token for …

    mit Repository record for Exploring valleytronics in 2D transition metal dichalcogenides (opens in a new tab)

  5. Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography

    … devices due to their low defect density, bottom-up growth, and ability to form single crystals. However, these advantages can only be realized if high quality contacts can be made to the nanowires, which require expensive techniques such as electron beam lithography. To fabricate nano …

    cambridge Repository record for Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography (opens in a new tab)

  6. Template-controlled integration and characterization of bottom-up grown ferroelectric nanoislands

    … progress in thin-film processing has opened up an exciting new field of applications for ferroelectric materials in information and semiconductor technology today. Exemplarily, the development of the Ferroelectric Random Access Memory (FeRAM) was enabled, which uses the spontaneous …

    aachen Repository record for Template-controlled integration and characterization of bottom-up grown ferroelectric nanoislands (opens in a new tab)