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Showing 1 to 1 of 1 for “"boron doped silicon metal semiconductor"”.
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Tunneling spectroscopy in p-type silicon
Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were …