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Showing 1 to 2 of 2 for “"bonding change"”.
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Recrystallization and Bonding Change Effects in a Sodium Borosilicate Glass Containing Molybdenum Trioxide
Made available in DSpace on 2017-07-06T18:49:00Z (GMT). No. of bitstreams: 3 Kessler_John_H_MS.pdf: 59922115 bytes, checksum: 6c6ad25f81a56cf00a5c45c1ff357ff1 (MD5) Kessler_John_H_MS_ABS.pdf: 491164 bytes, checksum: 59ee13197fca527ef2540c6b37e041a3 (MD5) license.txt: 4813 bytes, checksum: …
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Plasma induced damage to Si and SiGe devices and materials
… Si and strained Si_{1-x}Ge_x, and the resulting change in device characteristics. The energetic particles (ions, electrons and photons) in plasma reactor present a potentially hostile environment for processing VLSI devices. An inductively coupled plasma (ICP) reactor was used to study its damage …