Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"bipolar junction transistor"”.
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Compact modeling of neutron damage effects in a bipolar junction transistor
… concern for defense and space applications. Bipolar junction transistors (BJTs), in particular, are susceptible to neutron radiation. Neutron radiation affects BJT performance primarily by creating lattice defects, which can dramatically increase carrier recombination rate. In turn, the …
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Observation of plasma sheath modulation in the plasma bipolar junction transistor
Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the …
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Novel designs, materials and techniques in plasma bipolar junction transistor (PBJT) fabrication and testing
… with possible applications as a high-power phototransistor. Preliminary work on these robust silicon carbide PBJT devices has been expounded upon.
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Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties
A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the …
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Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor
… the physical modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport …
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Hybrid plasma-semiconductor devices
A hybrid plasma-semiconductor phototransistor has been realized by substituting a plasma for the collector of an npn bipolar junction transistor. Designated as the plasma bipolar junction transistor (PBJT), this optoelectronic device relies on the correspondence between the properties of a low …
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Radio frequency power amplifiers for portable communication systems
… presented in a unified and concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz …
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Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation
… governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser …
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Development of BJT radiation sensors and read-out systems for Radon detection
In this thesis we present a novel BJT (Bipolar Junction Transistor) detector that was developed and optimized for alpha particle and radon detection and monitoring. Using functional tests, we have shown that BJT detector operated with floating base can efficiently be used for the purpose of …
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S-parameter modeling of two-port devices using a single, memoryless nonlinearity
… be modeled as a memoryless nonlinear function. A bipolar junction transistor (BJT) operating in the active region is suggested as one application of this modeling approach. The validity of the model is demonstrated by the comparison of measured and model-predicted data for a microwave BJT. The …
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Device Shot Noise and Saturation Effects on Oscillator Phase Noise
… noise processes discussed for a non-saturating bipolar junction transistor (BJT) Colpitts oscillator will be extended to the case of a saturating BJT Colpitts oscillator. This new method gives insight into the design of low-noise oscillators, and provides guidelines for design of low-noise …
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Modeling and simulation of analog devices using PRECISE
… Arsenide Metal Semiconductor Field Effect Transistor (GaAs MESFET) device using the same methodology that has been used to develop the computer model for the Bipolar Junction Transistor (BUT) device. Hence this research, in addition to developing a library of a hundred and fifty odd …
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Novel approaches in current-feedback operational amplifier design
… programme was to design and develop a novel bipolar junction transistor Current Feedback Operational Amplifier (CFOA) with a good Common-Mode Rejection Ratio (CMRR), suitable for radio frequency (RF) applications. This research focused on investigation of the established CFOA with the …
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Amplifier Architectures for Wireless Communication Systems
… first part, Low Noise RF amplifier designs with Bipolar Junction Transistor (BJT) are studied to achieve better performing LNAs for receivers. The aim is to obtain a low noise figure while optimizing the bandwidth and achieving a maximum available gain. There are two designs that are operating at …
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Driver Based Soft Switch for Pulse-Width-Modulated Power Converters
… of a base driver circuit for current driven bipolar junction transistor (BJT). A new insulated-gate-bipolar-transistor (IGBT) and power metal-oxide-semiconductor field-effect-transistor (MOSFET) gated transistor (IMGT) base drive structure was initially proposed for a high power SiC BJT. The …
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Optoelectronic devices based upon the integration of semiconductor and gas-phase plasmas
This Dissertation was approved for publication on 2018-04-18 at 15:13.
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A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications
… Gallium Nitride (GaN) high electron mobility transistor (HEMT) devices. Measurement results of the transceiver's front end are reported in this dissertation. To our knowledge, this is the first RF transceiver that operates at this high temperature. Third, current-voltage and S-parameters …