Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 38 for “"bias conditions"”.
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Small -Signal Distributed FET Modeling
… accurate from do to 110 GHz for a wide range of bias conditions. The distributed model is intended to be compatible with a large-signal implementation. The distributed model performance is compared with that of a standard lumped-element model. Skin effect in the gate conductor is analyzed. …
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Characterization of GaN MOS-HEMT trap-related effects for power switching applications
… Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.
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Modulation of coherently coupled surface-emitting laser arrays: analysis and applications
… procedure, in which current isolation and bias conditions are leveraged to control array index profile and coupling phase, is developed to achieve coherently coupled operation of the phased VCSEL arrays reproducibly with high yield. An experimental study on the modulation characteristics …
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Mode-locked laser diodes for the 750 – 770 nm spectral region
… of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.4 ps. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also achieved.<br/>We checked the influence of the bias …
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Adaptation of VT-Dbr Lasers for LIDAR
… microampere currents in both forward and reverse bias conditions. The second part of this thesis is a preliminary design of an optical frequency-locked loop to reduce laser phase noise, which subsequently reduces the laser linewidth.</p> <p>By tuning with small currents in the forward bias …
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Degradation mechanisms of GaN high electron mobility transistors
… HEMTs have been electrically stressed at various bias conditions while they are being characterized by a benign characterization suite. We have confirmed that electrical stress on devices results in an increase in drain resistance RD and a decrease in maximum drain current IDmax. During the …
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Microwave Signal Generation Using Self-Heterodyning of a Fast Wavelength Switching SG-DBR Laser
… Linewidth results with respect to device DC bias conditions are also presented. Time resolved frequency step measurements have shown inherent thermal transients of approximately 200 ns upon wavelength switching. From the square wave switching profile, switching times of approximately 24 ns …
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Characterization and modeling of low-frequency noise in MOSFETs
… flicker noise under both constant and switched bias conditions. The effect of different biasing schemes on both RTS and flicker noise in time and frequency domain has been investigated.
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Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
… on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is …
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CAFM Studies of Epitaxial Lateral Overgrowth GaN Films
… sites demonstrate current leakage under reverse-bias conditions that are detrimental to device fabrication. Two growth techniques that were used to improve this leakage behavior for samples in this study included: epitaxial lateral overgrowth (ELO) and nano-ELO using a Si3N4 film. Both techniques …
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Characterization of pGaN-gate power HEMTs
… trapping effects, especially under high drain bias conditions. Extracted time constants demonstrated process-dependent trends, with wafers retaining more of the p-GaN surface exhibiting slower charge detrapping and more severe transient effects. Specialized test structures provided additional …
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Engineering Low Noise Organic Electrochemical Transistors for Electrophysiology Applications
… the performance of our devices under different bias conditions. It has been shown that the voltage applied between the three terminals of an OECT can modify the signal amplification, rendering xiv an optimisation on the biasing conditions imperative for high quality recordings. By employing …
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Fluctuations in dc SQUIDs: Quantum Noise Effects, Low Frequency Noise, and Single Electron Trapping
… tunneling kinetics. In contrast, the voltage bias dependence of the lifetimes is consistent with a simple nonequilibrium model in which the bias strongly enhances the rate for electrons to tunnel in from one side of the barrier and exit out the other side. Some junctions show clear evidence of …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… under different gate polarity and band bending conditions has been determined. For gate injection, electron transport through mid-gap states dominates, which leads to slow transient trapping at deep levels. Under substrate injection field and temperature dependent transport through …
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Finite Element Method Modeling Of Advanced Electronic Devices
… lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation …
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Physics of electrical degradation in GaN high electron mobility transistors
… devices are electrically stressed under various bias conditions while regularly characterized by a benign characterization suite. We observe that electrical stress beyond a critical voltage results in an increase in drain resistance, a decrease in maximum drain current, and a sharp increase in …
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Linearization of RF Power Amplifiers
… experimentally. The concept of dynamic bias is also presented as a method to improve cartesian feedback efficiency. The method works by setting up optimum bias conditions for the power amplifier (derived from amplifier characterizations) and then having the cartesian feedback loop make …
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Optically Controlled High Power High Speed Wide Band Gap Devices
… resistance and peak photocurrent under different bias conditions and optical energies were calculated, and the potential of these devices was further explored. </p> <p> Analyses show that slow transient responses under low optical illumination occur due to trapping and detrapping of photo-holes in …
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Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy
… and inverse-piezoelectric deformation of biased AlGaN/GaN transistors. Deformation measurements during device heating reveal shifts in the thermomechanical strain fields within devices as bias conditions change. Deformation measurements without heating reveal bias dependence of …
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Efficiency enhancement techniques for RF and millimeter wave power amplifiers
… tool for power amplifiers regardless of their bias conditions. A Class E tuned CMOS power amplifier (PA) operating in the 60 GHz band was designed. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and …
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