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Showing 1 to 1 of 1 for “"barrier inhomogeneity"”.

  1. Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes

    … associated with a multi-Gaussian distribution of barrier heights at the metal-semiconductor interface [Section 3.1]. Application of this model gives researches a means of understanding not only the effective barrier distribution at the MS interface but also its voltage dependence. With this …

    vt Repository record for Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes (opens in a new tab)