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Showing 1 to 20 of 26 for “"band offset"”.

  1. Band Offset Measurements of ε-(InxGa1-x)2O3/AlN using X-ray Photoelectron Spectroscopy

    Sultana, Maria2024

    … hold significant promise due to their ultra-wide band gap, tunable polarization properties, and optimized spectral response. In this regard, the ε-(In0.15Ga0.85)2O3 /AlN heterojunction has significant potential for high-performance optoelectronic devices, particularly in extreme environments, due …

    tdl Repository record

  2. Characterization of tellurium back contact layer for CdTe thin film devices

    Moffett, Christina, author, Sampath, W. S., advisor, Sites, James, committee member, Popat, Ketul, committee memberColorado State University. Libraries2018

    … were carried out to examine the valence band offset at the CdTe/Te back contact interface. The valence band offset was shown to be highly dependent on the Te thickness and was largely affected by oxidation and contamination at the surface. Capacitance measurements were carried out to …

    colostate Repository record

  3. Exciton confinement in strain-engineered InAs quantum dots in metamorphic In_{x}Ga_{1-x}As

    Khattak, Shaukat Ali, Hayne, ManusLancaster University2015

    … confining layer (LCL), d. Varying x changes the band offset and QD-CLmismatch (strain inside the QD), while varying d changes only QD-CL mismatch.We investigate the dependence of confinement on the QD-CL mismatch and band offset. Zero-magnetic-field spectra showed that wavelength (PL energy) …

    lancaster Repository record

  4. Anisotropic Heterostructures of Nanocrystals

    Kwon, Kwan-WookUniversity of Illinois at Urbana-Champaign2015

    … of NC heterostructures of materials with type II band offset and multiple exciton generation, TiO2/CdS and TiO2/PbS NC heterostructures have been synthesized as potential photocatalysts. While there is a need for improvement in yield and controlling of geometries by modifying synthetic method, new …

    uiuc Repository record

  5. Optical characterisation of quantum well infrared photodetectors (QWIPs) for gas sensing applications

    Lai, Khue TianUniversity of Hull2004

    … of the excited states in the QWIPs conduction band. The strain-balancing allows the use of Indium (In) concentrations up to 84% and hence deep wells with a large band offset relative to the outer barrier (which predominantly controls the dark current). The conduction band offset (ΔEc) for these …

    hull Repository record

  6. Application of novel gate materials for performance improvement in flash memory devices

    PU JING2009

    … originate from the increased conduction band offset of the floating gate caused by the incorporation of carbon. The formation of silicon carbide nano-structure is responsible for the band structure change. Adoption of the carbon doped polysilicon floating gate will result in little …

    nus Repository record

  7. First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown

    Huang, JianqiuVirginia Tech2018

    … trigger the dielectric breakdown. A classical band alignment method, the Van de Walle method, is applied to the case study of the Al/crystal-SiO2 (Al/c-SiO2) interface. Point defects, such as oxygen vacancy (VO) and hydrogen impurity (IH), are introduced into the Al/c-SiO2 interface to study …

    vt Repository record

  8. First Principle Modeling of Hybrid Halide Perovskites for Optoelectronic Applications

    Welch, EricTexas State University2019

    … and transport materials. Finally, the band offset method for studying interfaces revealed the lowest energy face between the HP CsPbBr¬3 and CuI to be the PbBr2 on Cu interface, where a type II band offset indicates charge separation at the interface; CuI is predicted to be a viable, …

    texas-state Repository record

  9. Elucidating efficiency losses in cuprous oxide (Cu₂O) photovoltaics and identifying strategies for efficiency improvement

    Brandt, Riley EricMassachusetts Institute of Technology2013

    … in which a large negative conduction band offset and structural defects lead to a low built-in voltage and high recombination activity. The effects of interface engineering are demonstrated in experiment and simulation. Broader simulations suggest opportunities for future efficiency …

    mit Repository record

  10. Optimization of the front end of CDTE solar cells

    Chen, Yunfei

    … oxide (TCO) layer and a window layer. New wider band gap materials, ZnMgO are being used to replace CdS as the window layer for the purpose of removing blue loss. For ZnMgO, three important parameters, including the atomic Mg content (x), thickness (t), and doping concentration (n) can play …

    njit Repository record

  11. Novel type-II nanocrystal quantum dots and versatile oligomeric phosphine ligands

    Kim, Sungjee, 1972-Massachusetts Institute of Technology2003

    … versatile oligomeric phosphine ligands. Type-II band engineered quantum dots (CdTe/CdSe(core/shell) and CdSe/ZnTe(core/shell) heterostructures) are synthesized by chemical means. The optical properties of these type-II quantum dots are studied in parallel with their type-I counterparts. The …

    mit Repository record

  12. Growth and optimization of quantum dots-in-a-well infrared photodetectors

    Attaluri, Ram

    … infrared detectors based on intersubband transitions in a novel InAs/In0.15Ga0.85As quantum dots-in-well (DWELL) heterostructure. In the DWELL structure, the InAs quantum dots are placed in an In0.15Ga0.85As well, which in turn is placed in a GaAs matrix. Due to the large band offset …

    unm Repository record

  13. The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS

    Gouldey, DavidVirginia Tech2010

    … and MOCVD and CdTe and CdS to determine the band alignments, conduction and valence band offsets, and Fermi level positions. These interface studies will help determine basic properties to see if these GaN films can be incorporated in a CdTe solar cell to improve its efficiency. It was …

    vt Repository record

  14. Charge Carrier Relaxation in Halide Perovskite Semiconductors for Optoelectronic Applications

    Richter, Johannes MartinUniversity of Cambridge2018

    … properties. For example, the nature of the bandgap is still debated and an indirect bandgap due to a Rashba splitting has been suggested. In this thesis, we study the early-time carrier relaxation and its impact on photoluminescence emission. We first study ultrafast carrier thermalization …

    cambridge Repository record

  15. Metal oxides as buffer layers in polycrystalline CdTe thin-film solar cells

    Pandey, Ramesh, author, Sites, James, advisor, Sampath, W. S., committee member, Ross, Kate, committee member, Harton, John, committee memberColorado State University. Libraries2021

    The optical band-gap of 1.5 eV and absorption coefficient the order of 105 cm-1 makes CdTea very attractive absorber for thin-film solar cells. This dissertation explores methods to improve both the front, or emitter, part of the cell and the back contact to the CdTe-based thin-film solar cells. …

    colostate Repository record

  16. Developing high efficiency Cu2ZnSnS4 (CZTS) thin film solar cells by sputtering

    Yan, ChangUNSW, Sydney2016

    … and large-scale production. Moreover, as a high bandgap material (Eg~1.5eV), CZTS is able to be combined with other photovoltaic cells with lower bandgap (like Si) for tandem solar cells, enabling higher power conversion efficiency beyond the single junction solar cell Shockley-Queisser …

    unsw Repository record

  17. Surface and interface studies of compound semiconductors

    Franklin, Gregg Edward2011

    … and adsorbate-induced reconstructions, valence-band discontinuities and Schottky-barrier formations, doping and metallization, work function changes and growth considerations. Experiments were performed on the Sb-stabilized GaSb(lOO)-(lx3) surface grown by molecular beam epitaxy. Bulk valence …

    uiuc Repository record

  18. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    Huang, Shouting2014

    … <italic>e.g.</italic>, quasiparticle: QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical …

    wustl Repository record

  19. Mechanical, electronic and optical properties of multi-ternary semiconductor alloys

    Chen, Dongguo

    … changes in the crystal field splitting and band gap narrowing are explored and explained in terms of the lattice mismatch and band offset between the binary constituents. The Y2 ordering induced change in the spin-orbit splitting is found to be positive and small. Additionally, a model for …

    njit Repository record

  20. Si-based Germanium-Tin (GeSn) Emitters for Short-Wave Infrared Optoelectronics

    Ghetmiri, Seyed Amir2017

    … integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.</p> <p>The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable …

    arkansas Repository record

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