Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 11 of 11 for “"band diagram"”.
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Advanced photonic crystal enhanced microscopy
… instruments and data processing, including the band diagram transmission set-up, enhanced fluorescence label-free microscope and objective coupled label-free microscope. In the initial project, I demonstrate the first hybrid total internal reflection and photonic crystal microscope. This imaging …
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Low temperature photoluminescence studies on sputter deposited cadmium sulphide/cadmium telluride heterojunctions and solar cells
… emission at lower excitation powers to near band edge excitonic emission at higher excitation powers. The effect of copper (Cu) used in making back contacts was studied in connection with the CdS/CdTe junction PL. It was found that the presence of Cu suppresses the sub-band gap PL emissions. …
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Assessment of colloidal self-assembly for photonic crystal
… anomalous dispersion characteristic near to the band edges or near to flat bands of the photonic band diagram is suited for superprism and light harvesting applications. Potentially, the unique characteristics of colloidal photonic crystal could be capitalized in a low cost micro-fabrication …
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Hypersonic phononic crystals
… analysis of hypersonic phononic crystals with band gaps in the GHz range is presented. First, the phonon dispersion relation for one dimensional polymeric phononic crystals fabricated by coextrusion of a large number of poly(methylmethacrylate)/poly(carbonate) and …
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LARGE AREA 3D PHOTONIC CRYSTALS WITH EMBEDDED WAVEGUIDES
… periodic potentials that are responsible for the bandgaps for electrons and holes. For electrons and holes, the periodic potential effectively determines how the charged particles propagate through the crystal under applied fields. Similarly, for photons in a photonic crystal, the periodic …
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Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy
… was reformulated such that physical processes or band diagram features could be related to the measurement results. Only under restricted circumstances, our formulation was found to be identical to the existing, commonly used, description of the photoluminescence temperature dependence.
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Floating gate engineering for novel nonvolatile flash memories
… density. Finally, charge trapping layer band engineering is proposed for SONOS-type memory for better memory performance. By manipulating the pulse ratio of Hf and Al precursor during ALD deposition, the band diagram of Hf[subscript x]Al[subscript y]O charge trapping layer is optimized to …
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Physical and optoelectronic properties of copper silver indium diselenide thin films
… of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. A promising alloy for tunable bandgap solar cells is the (Cu,Ag)(In,Ga)Se2 system. The focus of my dissertation is to perform a comprehensive characterization of the structural …
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… experimentally observed in the context of MOS band diagram for the first time in Hf-silicate gate stacks from low temperature and leakage measurements. Excellent match between experimental and calculated defect levels shows that bulk O vacancies are probably responsible for electron trapping at …
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Desarrollo de técnicas de caracterización para materiales de banda intermedia : Development of characterization techniques for intermediate band materials
El término material de banda intermedia (IB) hace referencia a un material semiconductor que, difiriendo de los semiconductores convencionales definidos por una única banda prohibida, posee una banda electrónica extra localizada entre la banda de valencia (VB) y la banda de conducción (CB). De esta …