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Showing 1 to 3 of 3 for “"band anticrossing"”.
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Novel dilute nitride semiconductor materials for mid-infrared applications
… dilute nitride materials. InAsN shows a large bandgap reduction with a small lattice mismatch when a small amount of nitrogen is introduced into the host InAs. Because the InAsN reported so far had generally poor crystalline quality and exhibited weak luminescence that quenched far below room …
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Desarrollo de técnicas de caracterización para materiales de banda intermedia : Development of characterization techniques for intermediate band materials
El término material de banda intermedia (IB) hace referencia a un material semiconductor que, difiriendo de los semiconductores convencionales definidos por una única banda prohibida, posee una banda electrónica extra localizada entre la banda de valencia (VB) y la banda de conducción (CB). De esta …
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Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs
This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted …