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Showing 1 to 9 of 9 for “"arsine"”.
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A comprehensive ab initio study of gallium and arsenic containing molecules
Theoretical calculations for the ground states of arsine (AsH$\sb3$), trimethylgallium (TMG) (Ga(CH$\sb3$)$\sb3$), the arsine$\cdot$TMG adduct, gallane (GaH$\sb3$), the gallane$\cdot$arsine adduct, small Ga$\sb{x}$As$\sb{y}$ clusters (x = y; x = 2-4), and small gallium hydrides are carried out at …
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Synthesis and characterisation of novel ferrocenyl compounds
… 19, 1,2'-Fc'[CH₂PH₂]₂ 20 and the ferrocenyl arsine FcCH₂CH₂AѕH₂ 25 were prepared and characterised. The X-ray crystal structure determination was carried out for 25. This is one of the few structures known for primary arsine compounds. The crystal structure of 18 was found to be isomorphous …
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The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
… MOCVD precursors such as trimethylgallium and arsine are absorbing in the ultraviolet region of the spectrum. Progress toward obtaining device quality material with growth at reduced substrate temperatures in the presence of laser irradiation is assessed.
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Electrolytic remediation of chromated copper arsenate wastes
… codeposition of all three metals, hydrogen and arsine would also be produced.
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Microchemical systems for the synthesis of nanostructures : quantum dots
… myristate (In(MA) 3) and tristrimethylsilyl arsine ((TMS) 3As) precursors showed similar behavior as InP growth. However, different from the growth of InP nanocrystals, the amount of excess fatty acid did not affect on the growth of InAs nanocrystals. Indium phosphide arsenide (InPxAs1 -) …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
… Annealing native oxide covered GaAs samples in Arsine (AsH 3) prior to ALD A1₂O₃ results in C-V characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs. Besides, both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ …
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Electrospray-friendly ligands for the mass spectral analysis of transition-metal complexes
… carbonyl complexes with ES-friendly phosphine, arsine and stibine ligands ionised by protonation, yielding strong [M + H]⁺ ions as the only signals in the spectrum. The metal halide complexes followed the known halide-loss mechanism. Pt(0) and Pd(0) complexes did not require functionalised …
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Der Weg zu Phosphan-verbrückten Übergangsmetall-Komplexen
Das Ziel der vorliegenden Arbeit war es, erstmals einen Komplex mit einem verbrückenden Phosphanliganden darzustellen. Dies sollte ausgehend von den zweikernigen Rhodiumkomplexen des Typs [Rh2XX’(CPh2)2(SbR3)] und geeigneten Phosphanen erreicht werden. Es galt zunächst, eine möglichst große Palette …
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Phosphorylation sites on specific neuronal proteins can control the mode of synaptic vesicle exocytosis and thereby regulate synaptic transmission
… respiration). Employing 0.3 and 3 M phenyl arsine oxide appears to perturb the spare respiratory capacity, whilst 0.1 M did not. This indicated that we were previously using too high a concentration of this drug to study modes of exocytosis. Such a result led to the testing of the drugs …