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Showing 1 to 1 of 1 for “"anzsrc-for: 401804 Nanoelectronics"”.
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Epitaxial aluminium gates in ultra-shallow GaAs/AlxGa1-xAs heterostructures for low disorder nanoelectronics
Researchers in the field of nanoelectronics partake in the unending pursuit to reduce device size in order to minimise energy consumption and maximise operation temperature. Device reduction entails decreasing the depth of the conduction channel below the wafer surface, but increased scattering …