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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 106 for “"anneal"”.
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The Effect of Hydrostatic Pressure on The Anneal of Quenched - in Vacancies in Gold
Made available in DSpace on 2015-05-12T17:12:16Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 6003910.PDF: 4137916 bytes, checksum: fe0ba5d93936777054c0a87c624d1eb1 (MD5) Previous issue date: 1960
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Material processing of quantum well infrared photodetectors
… characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix …
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Heating it up: a novel approach to annealing soluble organic semiconductors
… to crystallising TES-ADT films, namely a thermal anneal process. It involves heating the film to a temperature between 70 to 130 degrees (C), but less than the melting point of 154 degrees (C), obviating the need for the solvent anneal process. FET characteristics are obtained, with mobilities up …
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Fabrication and characterization of germanium-on-silicon photodiodes
… than for large devices. A post-metallization anneal in nitrogen at 400°C was found to reduce the dark current of small devices (10 x 10 pm) by ~1000X at -1 V. The same anneal reduces the dark current of larger devices (100 x 100 [mu]m) by ~140X. Through metal-oxide-semiconductor capacitor and …
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Kinetics and mechanisms of metal silicide formation
… have been investigated by thermally annealing Ti/polycrystalline Si bilayers using a combination of in situ sheet resistance measurement, in situ stress measurement, x-ray diffraction, transmission electron microscopy (TEM), scanning transmission electron microscopy, and Auger …
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Predicting CMOS Hot Carrier Degradation in VLSI Circuits
… The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.
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Plasma Annealing of Ion Implanted Semiconductors
A gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.
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Development of ternary oxides for use in advanced front contacts in cadmium telluride solar cells by magnetron sputtering
… processing scheme, as-deposited films are annealed in contact with a secondary CdS film. Films processed using this “proximity anneal” exhibited resistivities of ~2.2×10–4 Ω-cm and transmittance >90% when oxygen was present in the sputtering ambient in the range 600–700 °C. Sputtered CTO …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber metal-organic chemical vapor deposition (MOCVD) gate cluster tool. Chapter 3 demonstrates the realization of …
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Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the …
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Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy
… characterize the relationships found herein, annealing was performed on all of the samples examined. The growths with ions removed by deflector plates showed an interdependence between the deflector plate voltage and the gas flow rate: at low gas flow rates, high deflector plate voltage could …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… stacks that can survive the high temperature anneal necessary for forming ohmic contacts were demonstrated. Devices with three different gate stacks, composed of tungsten and a high-k dielectrics like HfO₂, A1₂O₃ and HfO₂/Ga₂O₃, were studied and compared with respect to DC transistor …
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Influence of composition and thermomechanical processing on microstructure evolution in AISI 430 ferritic stainless steel(FSS)
… the influence of these variables on the hot band annealing behaviour of this steel. The material employed was obtained from laboratory and commercial heats. Two hot roll finish temperatures, viz. 600°C and 800°C for the commercial heats and two alloy compositions of austenite potential 11 and 61% …
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X-Ray Topographic Studies of Deformation in Niobium and Dilute Niobium-Hydrogen Alloys
… below 10('6) cm('-2)) were grown by the strain-anneal technique from ribbons of polycrystalline niobium of thickness less than 0.2 mm.
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… semiconductor process involving high temperature annealing higher than 1000 oC. In this research, the focus was placed on the effects of nitrogen in HfO2 dielectrics to improve thermal stability (i.e. equivalent oxide thickness (EOT) increase by anneal and crystallization) of the dielectrics by …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to investigate the impact of forming gas annealing (FGA) on device performance. Following …
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Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon
"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of …
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Novel Reactions on Halogen -Terminated Si(100)
… and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these ""split dimer"" defects correlated with the …
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Copper wafer bonding in three-dimensional integration
… 400⁰C/4000 mbar for 30 min, followed by nitrogen anneal at 400⁰C for 30 min. Oxide distribution in the bonded layer is uniform and sparse. Evolution of microstructure morphologies and grain orientations of copper bonded wafers during bonding and annealing were studied. The bonded layer reaches …
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