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Showing 1 to 20 of 54 for “"aluminum nitride"”.
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Nonlinear aluminum nitride photonic crystal measurement using tapered fiber
… light. A ring resonator with a top layer of aluminum nitride, a material with high second order susceptibility, can achieve an efficient coupling between 780 nm visible light and 1550 nm infrared light. A tapered region is also integrated to improve the light transmission between an optical …
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Aluminum nitride microelectromechanical infrared detectors with integrated metamaterial absorbers
This work reports the development of uncooled spectrally selective mid-infrared (IR) detectors based on the seamless integration of metamaterial (MM) structures with microelectromechanical (MEMS) AlN resonators. Historically, uncooled absorbers have been limited in two key metrics: selectivity, the …
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Synthesis and sintering of nanocrystalline alumina and aluminum nitride
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
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Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1992.
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Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride
… The current status of work on the column III-nitride system of compound semiconductors is reviewed with special attention given to the material challenges presently limiting sophisticated device development. Furthermore, the organometallic vapor phase epitaxy (OMVPE) method of growing these …
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Growth, physical properties, and nanostructuring of epitaxial metastable hafnium aluminum nitride
Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-12-02T17:37:03Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Howe_Brandon.pdf: 35213703 bytes, checksum: 4339e1bf08b5bebc6922899d61292b4e (MD5)
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Superconducting nanowire single-photon detectors on aluminum nitride photonic integrated circuits
… processing. Among various waveguide materials, aluminum nitride (AlN) is a promising candidate because of its exceptionally wide bandgap, and intrinsic piezoelectric and electro-optic properties. In this Master's thesis, we developed a complete fabrication process for making high-performance …
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Sputter deposition of aluminum nitride for applications in thin-film resonators
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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REALIZATION OF TEMPERATURE COMPENSATED ALUMINUM NITRIDE MICRORESONATOR FILTERS WITH BANDWIDTHS BEYOND kt2 LIMIT
… filters based on temperature compensated aluminum nitride microresonators that have fractional bandwidths exceeding the microresonator coupling coefficient, kt2, limit of 0.3%. A method is presented that offers the flexibility of using low Q reactive components to couple temperature …
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X-ray diffraction studies of evaporated gold thin films deposited on aluminum nitride substrates
… particle sizes in evaporated gold thin films on aluminum nitride substrates as a function of substrate surface condition prior to deposition. The substrate treatments evaluated were surface roughness, use of titanium and chromium inter-layers, presence of an oxide layer on the substrate surface …
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Wideband characterization of aluminum nitride substrates and high power-high frequency thick film applications
… the desired requirements. The newly developed aluminum nitride (<i>AIN</i>) substrate shows a great deal of promise and potentially embraces the best qualities of alumina and beryllia. The objective of this dissertation is to study the electrical properties, thick film interaction, and …
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Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride
In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION …
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Design and fabrication of a prototype aluminum nitride-based pressure sensor with finite element analysis and validation
… an innovative prototype pressure sensor based on Aluminum Nitride (AlN) Surface Acoustic Wave (SAW) and Shear Horizontal (SH)-SAW. This AlN-based device has unique superiority over other SAW devices, including relatively lower cost, higher sensitivity, intrinsically higher reliability, more …
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Investigations of the gallium nitride, aluminum nitride and indium nitride semiconductors: Structural, optical, electronic and interfacial properties
… of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although …
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Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering
The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, …
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The impact of multilayer periodicity on texture, morphology, chemical stability and machining performance of titanium aluminum nitride/chromium nitride thin films
<p>Multilayer thin films of TiAlN/CrN were deposited at varying bilayer periods (lambda = 2, 4, 8 and 16 nm), along with a co-deposited (TiAlCr)N film and constituent TiAlN and CrN films, on both [111] silicon substrates and WC-4wt% Co inserts with an ISO SPGN 120308 geometry. The effects of …
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Texture evolution in metal nitride (aluminum nitride, titanium nitride, hafnium nitride) thin films prepared by off-normal incidence reactive magnetron sputtering
… the development of crystallographic texture in aluminum nitride (AlN), titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature in N2/Ar mixtures. Texture measurements were performed by x-ray pole figure analysis …
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Effect of low energy ion irradiation during growth on the composition, nanostructure, and physical properties of epitaxial metastable zirconium aluminum nitride
Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-10-15T19:00:24Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Master Dissertation.pdf: 23101363 bytes, checksum: c35d98278c93a599d3b071276046859a (MD5)
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3D Commutation-Loop Design Methodology for a SiC Based Matrix Converter run in Step-up mode with PCB Aluminum Nitride Cooling Inlay
… The final power loop solution that implements an aluminum nitride inlay is evaluated through simulated parasitic extraction and experimental double pulse tests. The layout achieves small, symmetric loop inductances. Finally, the full power, three-phase matrix converter demonstrates the successful …
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Switchmode Power Supply Miniaturization with Emphasis on Integrated Passive Components on Prefired High Performance Ceramic Substrates
… components on prefired alumina (Al2O3) and aluminum nitride (AlN) ceramic surfaces, for power electronic applications, have been generated. The use of aluminum nitride, as a high performance ceramic substrate and the resulting issues concerning compatible inks, have been investigated. Since …
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