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Showing 1 to 14 of 14 for “"aluminum gallium arsenide-gallium arsenide"”.
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Aluminum Gallium Arsenide / Gallium Arsenide Heterojunction Phototransistors for Fiber-Optic Communications
Made available in DSpace on 2014-12-12T20:55:08Z (GMT). No. of bitstreams: 1 8009108.pdf: 3346923 bytes, checksum: da74c95de718b6d1823ca180b76d249e (MD5) Previous issue date: 1979
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Growth, Characterization and Application of Aluminum-Gallium - Arsenide/gallium-Arsenide Modulation Doped Heterostructures
Modulation doped heterostructures show great potential for being the basis of a new family of high speed electronic devices, including photodetectors, charge-coupled devices and field effect transistors. This has motivated an extensive study of the growth and physical properties of …
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Gain-Guided Aluminum-Gallium - Arsenide - Gallium-Arsenide Quantum-Well Heterostructure Lasers Fabricated by Hydrogenation
… widely utilized form of coherent light emitters. Aluminum gallium arsenide is the prototype material system in heterostructure laser technology. New fabrication techniques that are simple and easily implemented with present technology may have an impact on laser manufacturing. Hydrogenation is …
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Phonon and Alloy-Clustering Effects in Aluminum Gallium Arsenide-Gallium Arsenide Quantum-Well Heterostructures
Phonon and alloy-clustering effects in the luminescence characteristics of Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWH) are studied. In the form of a QWH, GaAs is shown to lase over a (TURN)0.5 eV energy range between (TURN)E(,g) (GaAs)-36 meV and (TURN)E(,g)(GaAs)+445 meV.
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Luminescence Characteristics of Single and Multiple Aluminum Gallium Arsenide - Gallium Arsenide Quantum-Well Heterostructure Lasers
Made available in DSpace on 2015-05-13T15:22:18Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009077.PDF: 4016559 bytes, checksum: aac657376f17eee14329b8a673590ec2 (MD5) Previous issue date: 1979
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Luminescence characteristics of single and multiple aluminum gallium arsenide-gallium arsenide quantum-well heterostructure lasers
The luminescence properties of single and multiple A1x Gal-x As-GaAs quantum-well heterostructure lasers grown by meta10rganic chemical vapor deposition (MO-CVD) are shown to differ markedly from those of conventional double heterojunctions because of the two-dimensional nature of the active …
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Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures
In the experiments described here, Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that Al-Ga interchange is strongly influenced by the interdependence of the …
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Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers
Data are presented on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results …
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Investigation of implantation damage in aluminum gallium arsenide/gallium arsenide heterostructures using ion channeling and transmission electron microscopy
The implantation damage behavior of GaAs/Al$\sb{0.6}$Ga$\sb{0.4}$As multilayer structures has been investigated by implanting samples with 1 MeV Kr$\sp+$, 1.5 MeV Kr$\sp+$, 1 MeV Ar$\sp+$, and 1.5 MeV Kr$\sp{++}$ at 77 K. The resulting damage state was analyzed using low-, room-, and …
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Quasi-Two-Dimensional Phenomena at Aluminum-Gallium - Arsenide - Gallium-Arsenide Heterointerfaces: Multiple Quantum Wells and Modulation-Doped Structures (Superlattice, Modfet, Semiconductors)
This thesis describes a subset of phenomena at AlGaAs-GaAs heterointerfaces related to multiple quantum wells and modulation-doped structures. In the first section, two important results concerning multiple quantum well systems are described: optical absorption coefficients and exciton oscillator …
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Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical …
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Donor-Induced Layer Disordering via Silicon Diffusion in Aluminum-Gallium Arsenide - Gallium-Arsenide Quantum-Well Heterostructures, and Disorder-Defined Index-Guided Stripe Geometry Laserdiodes
The use of Si diffusion to disorder Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWHs) and quantum-well (QW) p-n junction lasers is described. Under the proper diffusion conditions Si produces n-type conductivity in Al(,x)Ga(,1-x)As layers, and will counterdope (to n-type) initially p-type …
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The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material …
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Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize …