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Showing 1 to 3 of 3 for “"aluminum gallium arsenide based semiconductor"”.
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Raman scattering studies of aluminum gallium arsenide based semiconductor superlattices
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-07T18:26:47Z No. of bitstreams: 1 1984_colvard.pdf: 4295312 bytes, checksum: ce5ff950ef04db12f158f3816d50fdc1 (MD5)
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Raman Scattering Studies of Aluminum-Gallium - Arsenide Based Semiconductor Superlattices (Phonons, Interfaces)
… measurements have been made on more than twenty semiconductor superlattices, all grown by molecular beam epitaxy and based on the Al(,x)Ga(,1-x)As system. The samples consist of undoped layers with alternating values of x along the {001} direction, and have periods ranging from 20(ANGSTROM) to …
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Disorder Effects in Aluminum Gallium Arsenide Quantum-Well Heterostructures
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-06-08T17:37:45Z No. of bitstreams: 1 1981_laidig.pdf: 3533030 bytes, checksum: 8ff5bf7f4a09ac9be7fa72eb51e93b98 (MD5)