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Showing 1 to 20 of 20 for “"alloy films"”.

  1. Superconducting transition temperatures of amorphous bismuth alloy films

    … critical temperatures T of c amorphous bismuth alloy films containing lead, thallium, and antimony in concentrations up to 13 atomic percent. The results indicate that the shift in T is approximately linear in impurity concentration, as c expected. The derivative of T with respect to impurity …

    uiuc Repository record for Superconducting transition temperatures of amorphous bismuth alloy films (opens in a new tab)

  2. Thermal conductivity of superconducting alloy films in a perpendicular magnetic field

    … the thermal conductivity of superconducting films of In - Bi alloys in a perpendicular magnetic field. The films were quench-condensed onto glass substrates held at 77 K, and had thicknesses ranging from l050 to 4570 A. The ratios of the BCS coherence length to the electron mean free path for …

    uiuc Repository record for Thermal conductivity of superconducting alloy films in a perpendicular magnetic field (opens in a new tab)

  3. Electrodeposition of High Magnetostrictive Cobalt Iron Alloy Films for Smart Tags and Sensor Applications

    <p>Magnetostrictive CoFe films were investigated for use as magnetoelastic tags or sensors. The ability to electrodeposit these films enables batch fabrication processes to pattern a variety of geometries while controlling the film stoichiometry and crystallography. In current research looking at …

    unm Repository record for Electrodeposition of High Magnetostrictive Cobalt Iron Alloy Films for Smart Tags and Sensor Applications (opens in a new tab)

  4. Electronic Thermal Conductivity of Superconducting Lead - Manganese, Indium - Manganese, and Indium - Chromium Alloy Films

    Made available in DSpace on 2015-05-13T15:22:05Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7709150.PDF: 2639422 bytes, checksum: f0bec11959060a1e0374a08c1ebfbdc4 (MD5) Previous issue date: 1976

    uiuc Repository record for Electronic Thermal Conductivity of Superconducting Lead - Manganese, Indium - Manganese, and Indium - Chromium Alloy Films (opens in a new tab)

  5. Electronic thermal conductivity of superconducting lead-manganese, indium-manganese, and indium-chromium alloy films

    … thermal conductivity of quench-condensed films of lead-manganese and indium-manganese alloys. The results are compared with calculations based on Shiba's theory of superconductors containing magnetic impurities. For Pb-Mn, the value of £ (the normalized position in the energy gap of the …

    uiuc Repository record for Electronic thermal conductivity of superconducting lead-manganese, indium-manganese, and indium-chromium alloy films (opens in a new tab)

  6. Sputter deposition and plasma modification of tungsten alloys for nuclear fusion applications

    … This thesis investigated the use of tungsten alloy films as a plasma-facing material for a future reactor. Tantalum and chromium were chosen as the alloying elements, and 60 − 100 nm films were manufactured using magnetron sputter deposition at a variety of alloy concentrations. Tungsten alloy

    aus-cath Repository record for Sputter deposition and plasma modification of tungsten alloys for nuclear fusion applications (opens in a new tab)

  7. Sputter deposition and plasma modification of tungsten alloys for nuclear fusion applications

    … This thesis investigated the use of tungsten alloy films as a plasma-facing material for a future reactor. Tantalum and chromium were chosen as the alloying elements, and 60 − 100 nm films were manufactured using magnetron sputter deposition at a variety of alloy concentrations. Tungsten alloy

    anu Repository record for Sputter deposition and plasma modification of tungsten alloys for nuclear fusion applications (opens in a new tab)

  8. Upper critical magnetic field of superconducting films with magnetic impurities

    … magnetic field, H(T), of c2 In-Mn and Pb-Mn alloy films. Hc2 was determined from the resistance of the films. The results were compared with the theory of Fulde and MakL This theory assumes that the electron-phonon coupling is weak, and that the interaction between the impurity spins and the …

    uiuc Repository record for Upper critical magnetic field of superconducting films with magnetic impurities (opens in a new tab)

  9. Experimental and Simulation Studies of the Processing of Nanoscale Materials: Inert Gas Condensation and Ion Irradiation Methods

    … T i &sim;350&deg;C, phase separation in Cu-Co films of all compositions stabilizes at high doses (by 5 x 1015 ions/cm 2), indicating the existence of temperature-dependent steady states for these alloys under irradiation. At temperatures higher than 350&deg;C, macroscopic-like coarsening is …

    uiuc Repository record for Experimental and Simulation Studies of the Processing of Nanoscale Materials: Inert Gas Condensation and Ion Irradiation Methods (opens in a new tab)

  10. Growth and properties of hydrogenated amorphous silicon carbon alloys by DC reactive magnetron sputtering

    … silicon-carbon (a-Si$\rm\sb{1-x}C\sb{x}$:H) alloy films by dc reactive magnetron sputtering (RMS) of a silicon target in a plasma of (Ar + H$\rm\sb2$ + CH$\sb4).$ Films with optical bandgaps of 1.8-2.0 eV and x $\le$ 0.2 have a compact microstructure; no CH$\rm\sb{x}$ groups are detected by …

    uiuc Repository record for Growth and properties of hydrogenated amorphous silicon carbon alloys by DC reactive magnetron sputtering (opens in a new tab)

  11. Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001)

    … We show that Ge does segregate out of Si1-xGe x alloy films to create islands with higher Ge concentration than the deposited film. We also show that the coarsening of the island diameter growth that occurs during a 650&deg;C anneal obeys a power law which suggests that adatoms detach from the …

    uiuc Repository record for Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001) (opens in a new tab)

  12. Growth and characterization of epitaxial metastable (gallium arsenide)(1-x)(silicon(2))(x) alloys and (gallium arsenide)(1-x)(silicon(2))(x)/gallium arsenide strained-layer superlattices

    … (GaAs)$\sb{\rm 1-x}$(Si$\sb2)\sb{\rm x}$ alloys with x $\leq$ 0.57 have been grown on GaAs(001) using a hybrid sputter deposition technique. Triple-crystal x-ray diffraction studies showed that the full-width at half maximum intensity of alloys with x $\leq$ 0.4 were nearly equal to those …

    uiuc Repository record for Growth and characterization of epitaxial metastable (gallium arsenide)(1-x)(silicon(2))(x) alloys and (gallium arsenide)(1-x)(silicon(2))(x)/gallium arsenide strained-layer superlattices (opens in a new tab)

  13. UV/ozone induced oxidation of silicon(1-x) germanium(x) alloys and thermal desorption of the oxide film

    … oxidation of Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$ alloys and thermal desorption of the oxide film. A low temperature technique has been demonstrated for cleaning Ge wafer surfaces for the growth of high quality epitaxial films. Using x-ray photoelectron spectroscopy (XPS) and other techniques, it …

    uiuc Repository record for UV/ozone induced oxidation of silicon(1-x) germanium(x) alloys and thermal desorption of the oxide film (opens in a new tab)

  14. X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors

    Amorphous selenium and its alloy are important materials for flat panel digital X-ray detectors. The performance of the X-ray detector is directly related to the carrier mobility and carrier-trapping lifetime of amorphous selenium and its alloy. An experiment was conducted to examine the dose rate …

    sask Repository record for X-ray Induced Changes in Electronic Properties of Stabilized Amorphous Selenium Based Photoconductors (opens in a new tab)

  15. Deposition and properties of Co- and Ru-based ultra-thin films

    … route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the …

    texas Repository record for Deposition and properties of Co- and Ru-based ultra-thin films (opens in a new tab)

  16. Electrochemical and spectroscopic insights into the electroreduction of carbon dioxide to value added chemicals

    … the electro-deposition of Cu, Cu/Ag, and Cu/Sn alloy films with the addition of 3,5-diamino-1,2,4-triazole (DAT) as an electrodeposition inhibitor. All three Cu-based electrodes exhibit high Faradaic efficiency (FE) of CO2 reduction toward C2H4 production. The CuSn-DAT electrode exhibits the …

    uiuc Repository record for Electrochemical and spectroscopic insights into the electroreduction of carbon dioxide to value added chemicals (opens in a new tab)

  17. Understanding and Controlling the Optoelectronic Properties of Cs2AgBiBr6 Double Perovskite

    … properties of Cs2AgBiBr6 double perovskite thin films, focussing on three main areas: 1) understanding the role of grain boundaries on device performance, 2) lowering the bandgap through alloying with Sb3+, and 3) understanding the potential and limitations of bismuth-antimony double perovskite …

    cambridge Repository record for Understanding and Controlling the Optoelectronic Properties of Cs2AgBiBr6 Double Perovskite (opens in a new tab)

  18. Nanostructure formation on Germanium by ion irradiation

    … ion implantation through ultra-thin (10-20 nm) films of silicon nitride (SiNx) was investigated as a possible way to impact on nanovoid formation kinetics, prevent ambient contaminations and prevent Sn out-diffusion upon thermal treatments. Firstly, low temperature Sn+ implants were carried out …

    trento Repository record for Nanostructure formation on Germanium by ion irradiation (opens in a new tab)

  19. Electric and thermoelectric properties of antiferromagnetic metals

    … in ferromagnetic film, such as Ni and Ni–Fe–Pt alloy films, where a temperature-dependent ANE signal is observed. We observed a moderate ANE coefficient for Ni$_3$Pt of 0.4 $\mu$V/K at 300 K and peaks near 0.6 $\mu$V/K at 200 K. We then shifted the ANE peak towards room temperature by tuning the …

    uiuc Repository record for Electric and thermoelectric properties of antiferromagnetic metals (opens in a new tab)