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Showing 1 to 6 of 6 for “"admittance spectroscopy"”.
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Electrical characterisation of defects in wide bandgap semiconductors.
… characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline …
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Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment
… capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an …
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Capacitance spectroscopy on copper indium diselenide based solar cells
… is investigated using deep level transient and admittance spectroscopy (DLTS and AS). For the solar cells with mixed absorber composition (0 < GGI<1) in principle the same defect spectra were found. So the bulk defects are not responsible for the 'break down' in open circuit voltage. …
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Einfluss der Schichteigenschaften auf das elektrische und optoelektrische Verhalten von AlGaN-GaN-HEMT-Transistoren
… measurement methods. With photoionisation spectroscopy on layers grown on sapphire and silicon substrates two resp. three different traps responsible for the current collapse were found. Current collapse is assigned to traps in the GaN buffer layer. Using backgating current deep level …
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Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys
… with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance …
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Tecnologías de fabricación de microsistemas electromecánicos actuados piezoeléctricamente con nitruro de aluminio
… of the devices has been characterized by admittance spectroscopy. The use of a piezoelectric capacitor has allowed actuating and sensing the induced displacements simultaneously by electrical means. This is due to the significant impedance variations that take place in the resonance. We …