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Showing 1 to 5 of 5 for “"access resistance"”.

  1. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    … of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required the development of two different technologies that are described in this thesis. First, gate stacks that can survive the high temperature anneal necessary for forming …

    mit Repository record for Self-aligned AlGaN/GaN transistors for sub-mm wave applications (opens in a new tab)

  2. Monte Carlo simulation for high-frequency intrinsic noise analysis of MOSFET

    … double gate FinFET showed lower gate and source access resistance, and minimum noise figure, which contains important information about the intrinsic noise characteristic.

    uiuc Repository record for Monte Carlo simulation for high-frequency intrinsic noise analysis of MOSFET (opens in a new tab)

  3. Electric field engineering in GaN high electron mobility transistors

    … we introduced a partial recess in the drain access region of the transistor to engineer the electric field along the channel of the device without introducing parasitic capacitances. By reducing the peak electric field, the average electron velocity is increased by 50%. This new technology …

    mit Repository record for Electric field engineering in GaN high electron mobility transistors (opens in a new tab)

  4. Reliability Characterisation of III-Nitrides Based Devices for Technology Development

    … degradation (e.g. current collapse and on-resistance) and unrecoverable degradation (e.g. access resistance of contacts, and gate leakage current) persist to be limiting reliability factors. The mechanisms contributing towards performance and reliability degradation of AlGaN/GaN HEMTs, …

    liverpool-jm Repository record for Reliability Characterisation of III-Nitrides Based Devices for Technology Development (opens in a new tab)

  5. Entrance effects on solution transport through nanoporous membranes

    … of electrolytes across porous membranes. The access electrical resistance, which is the electrical resistance associated with the electric field lines bending into and out of the pores, has previously been shown to make up a significant fraction of the total electrical resistance when the …

    adelaide Repository record for Entrance effects on solution transport through nanoporous membranes (opens in a new tab)