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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 421 for “"Zr"”.
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Fast impurity diffusion in hcp Zr
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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Electrical conductivity and structural disorder in Gd₂Ti₂O₇-Gd₂Zr₂O₇ and Y₂Ti₂O₇-Y₂Zr₂O₇ solid solutions
Thesis. (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.
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Reação de estado sólido em multicamadas de Fe-Zr
Filmes finos de Fe-Zr na geometria de multicamadas foram tratados termicamente variando-se a temperatura (350ºC e 500ºC) e o tempo de tratamento (10min a 72h). As fases formadas por Reação de Estado Sólido (RES) em multicamadas com três composições totais diferentes (Fe0.67Zr0.33, Fe0.50Zr0.50, …
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Electrochemical Hydrogen Absorption by Zr-Cu-Al-Ni Metallic Glasses
… absorption of hydrogen has been studied on the Zr-based amorphous alloys. The influence of hydrogen absorption on the stability of the amorphous phase and its crystallisation was investigated. Additionally, the cathodic hydrogen reaction mechanism on the surface of the alloy, the reversibility …
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The effect of Zr and ZrB2 additions to NdFeB alloys
… phase, free α-Fe, via additions of 0.6 at% of Zr or 1.0 at% of ZrB2 have been investigated by EPMA (Electron Probe Microanalysis) and TEM (Transmission Electron Microscopy). 1.0 at% of ZrB2 has been found to be very effective in suppressing the formation of free α-Fe dendrites during …
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The (p, n) charge-exchange reaction on ⁹⁰Zr at intermediate energies
… 4°. In this work the data collected for the ⁹⁰Zr target will be presented. The influence on the data from slow neutrons due to previous pulses is discussed and the best manner of removing them from the spectra is recommended. It is shown how the background cosmic rays can be utilised to measure …
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Switching Dynamics in Ferroelectric Hf₀.₅Zr₀.₅O₂ Devices: Experiments and Models
Ferroelectric Hf₀.₅Zr₀.₅O₂ (FE-HZO) has breathed new life into the field of ferroelectric research, boasting exceptional physical properties, such as compatibility with existing semiconductor processes, highly scalable thickness, and prominent FE properties. As a result, this intriguing material …
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Pressure dependence of superconductivity in amorphous Ni x Zr 100-x alloys
… temperature Ic of a series of amorphous NixZr 1 OO-x alloys have been studied under quasmydrostatic pressures upto 8 G Pa. For amorphous samples having Ni-concentration less than 40%, i)Tc/dP is positive in sign and it decreases non linearly with increase in I. whereasdTcldP is negative in …
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Electrodeposition of Nb, Ta, Zr and Cu from Ionic Liquid for Nanocomposites Preparation
Multilayer metal materials with nanometric scale are important in modern engineering applications. Composite materials based on metals with different characteristics give rise to new materials with unique properties. Among the others, nanostructured composites constituted by immiscible metals can …
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Synthesis, characterization and reactivity of organometallic Zr(IV) carboxylate and titanium aminotroponiminate complexes
The synthesis and structure of several Zr(IV) carboxylate complexes are described in which the bridging carboxylate is the dianion of 111-xylylenediamine bis(Kemp's triacid imide) (H2XDK) or the more soluble propyl derivative (H2PXDK). Reaction of either H2XDK or H2PXDK with [Zr(CH2Ph)4] or …
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Deposition and characterisation of (Ti,Zr) based hard compound and multi-layer PVD films.
… the design, metallurgy and performance of TiZr, ZrMo and TiMo segmented targets for use in steered cathodic arc evaporation and unbalanced magnetron sputter PVD techniques. A hot isostatic pressing technique was used to manufacture a range of prototype targets by diffusion bonding of …
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Synthesis and Characterization of pure-phase Zr-MOFs Based on meso-Tetra(4-carboxyphenyl)porphine
… transfer in PCN-223(free-base), a highly stable Zr-MOF based on meso-tetrakis(4-carboxyphenyl)porphyrin was investigated, using diffuse reflectance spectroscopy, steady-state emission spectroscopy, time-correlated single photon counting (TCSPC) spectroscopy and nanosecond transient absorption …
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Effect of ion irradiation on the rate dependence of plastic deformation of extruded Zr-2.5%Nb
… of this thesis is to examine the properties of Zr-2.5%Nb pressure tube material in the transverse direction. Through testing at room temperature, material properties such as the strain hardening, strain rate sensitivity and apparent activation volume were investigated. The effects of Zr+ …
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Fulvenkomplexe des Typs Cp 2 Zr(Eta 6 -C 5 H 4 =CR 2): neuartige Elektronenüberschussverbindungen
… von Fulvenkomplexen des Zirconiums vom Typ [Cp 2 Zr(Eta 6 -C 5 H 5 CR 2)] synthetisiert und vollständig charakterisiert. Diese ungewöhnliche Verbindungsklasse zeichnet sich durch einen Elektronenüberschuss aus. Mittels Einkristallstrukturuntersuchungen konnten vier Vertreter dieser neuen …
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Analysis of U-Zr-C-O Quaternary System for Applications in Advanced ZRC Coated Triso Particles
<p>The implementation of ZrC for use in oxide TRISO particles for Very High Temperature Reactor (VHTR) conditions to prevent kernel overpressurization and kernel migration has been proposed by several researchers. Analysis is performed incorporating first-principles thermodynamics along with …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… In this dissertation, a detail study of Zr and Al incorporated HfO_2 based high-[kappa] dielectrics is conducted to investigate improvement in electrical characteristics and reliability. To meet scaling requirements of the gate dielectric to sub 0.7 nm, Zr is added to HfO2 to form …
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Process-Induced Degradation during the Integration of Pb(Zr/x Ti/1-x)O3 Ferroelectric Capacitors
… atoms in perovskite structure, Ti or Zr in the case of Pb(Zr/x Ti/1-x)O³ (PZT), the movement can be suppressed or inhibited by many factors such as space charges, defects, chemical reactions, and stress of stacked layers. Unlike conventional silicon processes, the integration of …
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