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Showing 1 to 3 of 3 for “"XTS 13-35"”.
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Detection of energetic neutral flux emanating from extreme ultraviolet light lithography sources
… the light source wavelength from 195nm down to a 13.5nm ± 0.2 nm. This shift allows for an increase in resolution without the traditional consequences of a reduced depth of focus. Such a drastic reduction in wavelength is not without any technological hurdles. One such hurdle is the existence of …
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Cleaning of tin debris by reactive ion etching in a discharge-produced EUV plasma source
… denser integrated chips. The short wavelength (13.5±0.2 nm) of EUV light enables EUVL to improve the resolution (the minimum feature size) far beyond the conventional limit in current high volume manufacturing. EUV light can be generated by making hot (Te ∼ 30 eV) plasma, and collected by …
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Diagnosis of the flux emanating from the intermediate focus of an extreme ultraviolet light lithography source
… transport will be explored using the XTREME XTS 13-35 EUV light source. Utilizing the Sn Intermediate Focus Flux Emission Detector (SNIFFED), three triple Langmuir probes, as well as a set of Si witness plates placed along the mock-up collector optic and at the intermediate focus, it will be …