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Showing 1 to 14 of 14 for “"Wire bond"”.

  1. Thermal and Thermo-Mechanical Analyses of Wire Bond vs. Three-dimensionally Packaged Power Electronics Modules

    … industry is pushing the limits of current wire bonding packaging technology. Emerging three-dimensional power packaging techniques have shown their potential to replace wire bonding technology down the road. However, these innovative technologies have not yet been fully understood in terms …

    vt Repository record for Thermal and Thermo-Mechanical Analyses of Wire Bond vs. Three-dimensionally Packaged Power Electronics Modules (opens in a new tab)

  2. Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology

    … or multi-phase flow, can be implemented with non-wire bond packaging to improve thermal management while maintaining proper electrical performance. Embedded power is one such packaging technology, which provides a compact structure for interface of power semiconductor to fluid flow. The objective …

    vt Repository record for Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology (opens in a new tab)

  3. Design and Analyses of a Dimple Array Interconnect Technique for Power Electronics Packaging

    This research developed a novel, non-wire bond semiconductor interconnect technology, termed the Dimple Array interconnect (DAI), with significantly improved electrical, thermal and mechanical characteristics for power electronics applications. In the DAI structure, electrical connections onto the …

    vt Repository record for Design and Analyses of a Dimple Array Interconnect Technique for Power Electronics Packaging (opens in a new tab)

  4. Design and Characterization of Liquid Metal Flip Chip Interconnections for Heterogeneous Microwave Assemblies

    … for microwave applications compared to wire bond interconnections because of their reduced parasitics, more compact architecture, and flexibility in laying out flip chip bond pads. Reduction in interconnect parasitics enables these interconnects to support broadband signals, therefore …

    vt Repository record for Design and Characterization of Liquid Metal Flip Chip Interconnections for Heterogeneous Microwave Assemblies (opens in a new tab)

  5. Electrical Integration of SiC Power Devices for High-Power-Density Applications

    … and high-power operations, integrated wire-bond phase-leg modules are also developed with SiC MOSFET bare dice. High-temperature packaging materials are carefully selected based on an extensive literature survey. The design considerations of improved substrate layout, laminated bus …

    vt Repository record for Electrical Integration of SiC Power Devices for High-Power-Density Applications (opens in a new tab)

  6. Exploration of liquid crystal polymer packaging techniques for rf wireless systems

    … interest in low-cost, low-power, high data rate wireless systems for both commercial and defense applications. Some of these include air defense systems, remote sensing radars, and communication systems that are used for unmanned aerial vehicles, ground vehicles, and even the individual consumer. …

    gatech Repository record for Exploration of liquid crystal polymer packaging techniques for rf wireless systems (opens in a new tab)

  7. Synthesis and Application of Ceramic Paste for High-Temperature Electronic Packaging

    … limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The …

    arkansas Repository record for Synthesis and Application of Ceramic Paste for High-Temperature Electronic Packaging (opens in a new tab)

  8. Planar metallization failure modes in integrated power electtonics modules

    … In addition, planar interconnections reduce the wire bond inductive and resistive parasitic parameters, especially for high frequency applications. However, planar integration technology is a packaging approach with a large contact area between different materials. This may result in unknown …

    vt Repository record for Planar metallization failure modes in integrated power electtonics modules (opens in a new tab)

  9. Modeling, Analysis, and Design of Distributed Power Electronics System Based on Building Block Concept

    … is characterized in comparison with the wire-bond module. The soft-switching techniques are evaluated for PEBB applications. The Zero-Current-Transition (ZCT) is proved better because the parasitics in the power current flow path are absorbed into the resonant soft-switching operation. …

    vt Repository record for Modeling, Analysis, and Design of Distributed Power Electronics System Based on Building Block Concept (opens in a new tab)

  10. High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure

    … some existing packaging approaches, such as wire-bond interconnects and solder die-attach, flip-chip and pressure contacts. Based on the survey, a high temperature, multilayer 3-D packaging technology in the form of an Embedded Chip Module (ECM) is proposed to realize a lower stress …

    vt Repository record for High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure (opens in a new tab)

  11. Integrated Current Sensor using Giant Magneto Resistive (GMR) Field Detector for Planar Power Module

    Conventional wire bond power modules have limited application for high-current operation, mainly because of their poor thermal management capability. Planar power modules have excellent thermal management capability and lower parasitic inductance, which means that the planar packaging method is …

    vt Repository record for Integrated Current Sensor using Giant Magneto Resistive (GMR) Field Detector for Planar Power Module (opens in a new tab)

  12. Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips

    … of power chips is accomplished with wirebonds. Wirebonds in power devices and modules are prone to resistance, noise, parasitic oscillations, fatigue and eventual failure. Furthermore, there has been an increase demand for higher power density and better efficiency for power …

    vt Repository record for Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips (opens in a new tab)

  13. Passive Balancing of Switching Transients between Paralleled SiC MOSFETs

    … Kelvin connection is normally applied. However, wire bond inside the package of discrete MOSFETs and part of the external leads are inevitable and add to Lcm. Peak-current and switching energy mismatches vary with operating conditions (including input voltage, input current, and switching speed). …

    vt Repository record for Passive Balancing of Switching Transients between Paralleled SiC MOSFETs (opens in a new tab)