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Showing 1 to 1 of 1 for “"Wide-gap-Halbleiter"”.
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
… the in-situ measured, temperature dependent band-gap shift of SiC. This technique allows adjusting any MOVPE system to identical run-by-run wafer temperatures. Using this new temperature determination approach the cause of irreproducibility in an horizontal reactor is investigated. The two major …