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Showing 1 to 20 of 181 for “"Wide-bandgap"”.
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Graphene Heterostructures with Wide Bandgap Semiconductors
… microelettronica è legata all'assenza di un bandgap, che si ripercuote in uno scarso rapporto Ion/Ioff se utilizzato come canale di dispositivi di tipo MOSFET. Allo scopo di superare queste limitazioni, nuove concezioni di dispositivo basate su eterostrutture di Gr su semiconduttori sono …
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High power wide bandgap cascode switching circuits
Emerging wide bandgap (WBG) power transistors are capable of improving the efficiency of mains voltage power electronic circuits. Several commercial WBG transistors are now available, but all exhibit undesirable gate drive characteristics. The cascode circuit has been suggested as a solution to …
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Electrical characterisation of defects in wide bandgap semiconductors.
… the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of attention because of their potential applications in the fields of power electronics and optoelectronics. Raman spectroscopy, …
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Optomechanical Spin-Photon Interface in Wide-Bandgap Materials
… absorption. As a result, this thesis employs wide-band gap materials, such as diamond and hexagonal boron nitride (hBN), which exhibit negligible nonlinear absorption at telecommunication wavelengths. In this thesis, we demonstrate an emerging platform that realizes an interface between spin …
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Carrier transport properties measurements in wide bandgap materials
… carrier lifetime, and resistivity in two wide bandgap materials, GaN and diamond. A combination of two methods was used to obtain these transport properties. The two were optical beam induced current (OBIC) and electron beam induced current (EBIC) time of flight transient measurements. …
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Atom probe tomography study of wide bandgap semiconductor materials
… to provide 3D nanoscale studies. APT has been widely used in metals and conductive materials but design changes in the tool in recent years have made atom probe a suitable tool for semiconductor analysis. Because research in atom probe tomography of semiconductors is still in its infancy, it is …
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Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices
… new devices have been commercialized using wide bandgap (WBG) semiconductors including silicon carbide (SiC) and gallium nitride (GaN). These new devices promise enhanced capabilities (e.g., higher switching speed, smaller die size, lower junction capacitances, and higher thermal …
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Directed Synthesis and Doping of Wide Bandgap Semiconducting Oxide Nanocrystals
Wide bandgap semiconducting oxide nanocrystals are a useful class of materials with high stability and numerous useful properties. In the field of catalysis, high surface area oxides are commonly used as catalytic supports and have been found to be photocatalytically active for the production of …
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A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices
… high power density need to combine lasted wide bandgap (WBG) device technology and high switching frequency to reduce passive filter size thus further shrink overall space. While still maintaining decent power conversion efficiency and low electromagnetic interference (EMI) with higher …
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Expanding electronics beyond silicon with wide-bandgap, 2D, and ferroelectric materials
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
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Dynamic Characterization of Wide Bandgap Devices for Power Electronic System Integration
Wide Bandgap (WBG) devices offer significant performance advantages for next-generation power electronic systems. However, the dynamic stresses induced by application-specific conditions present limited physical and behavioral understanding, posing critical concerns for reliability and performance …
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Investigation of wide bandgap semiconductors for room temperature spintronic, and photovoltaic applications
<p>"Suitability of wide bandgap semiconductors for room temperature (RT) spintronic, and photovoltaic applications is investigated.</p> <p>Spin properties of metal-organic chemical vapor deposition (MOCVD) – grown gadolinium-doped gallium nitride (GaGdN) are studied and underlying mechanism is …
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
Ultra-wide bandgap (UWBG) semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
… to the deep ultraviolet wavelengths. Low-bandgap, high indium content III-nitride materials are investigated for longer wavelength applications. High indium incorporation into the crystal is achieved via plasma-assisted molecular beam epitaxy (PAMBE) at low growth substrate temperatures < …
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Overview and development of a wide bandgap, high temperature circuit and measurement solution
… for various applications. From the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to …
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 …
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Integration Challenges In High Power Density Wide Bandgap Based Circuits for Transportation Applications
… converters are desired. The new generation of wide bandgap (WBG) power semiconductor devices pushs the switching frequency and output power of the electric system in transportation to a higher level thanks to their higher blocking voltage, higher operating frequency, and smaller parasitic …
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Design of a Hybrid Unipolar Modulation Dual-Buck Inverter using Wide Bandgap Devices
… recovery concerns by using devices such as wide-bandgap GaN HEMTS and SiC Schottky diodes. The proposed inverter topology also realizes the benefits of the dual-buck topology while using half of the number of diodes and inductors compared to a standard full-bridge dual-buck inverter. The use …
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