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Showing 1 to 20 of 83 for “"Wide-band-gap"”.
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Wide band-gap nanowires for light emitting diodes
Wide band-gap nanowires composed of GaN and ZnO are promising materials for unique designs and potential efficiency improvement of light emitting diodes (LEDs) for solid state lighting. The large surface-to-volume ratio of nanowires provides facile strain-relaxation such that nanowires can be grown …
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Investigation of new semiconductor materials for wide band-gap devices
… the compositional and optical properties of wide bandgap III-nitride and gallium oxide semiconductor materials using scanning electron microscopy techniques. The primarily used techniques used here were wavelength dispersive X-ray spectroscopy (WDX) and cathodoluminescence (CL) with other …
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Optically Controlled High Power High Speed Wide Band Gap Devices
… interest over the past few years in the areas of wide bandgap power electronics for high speed, high power and high efficiency switches which enable innovative approaches to compact pulse power system design and implementation. In the area of high speed pulse technology, optical techniques are …
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Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides
<p>Wide band gap semiconductors and oxides have attracted much attention in the last decade because of their various applications to next generation opto- and micro-electronics. My research focuses on the process dependence of the defects and dopants in wide band gap semiconductors and oxides of …
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Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
… of power conversion technology. The emerging wide-band-gap (WBG) material based power semiconductor devices are considered as gaming changing devices which can exceed the limit of silicon (Si) and be used to pursue groundbreaking high-frequency, high-efficiency, and high-power-density power …
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Chemical approaches to organometallic chemical vapor deposition of wide band-gap II-VI layers and naonocrystal composites
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1995.
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Advancements in resonant and current source gate driving techniques for fast switching Wide Band Gap (WBG) Metal Oxide Field Effect Transistors (MOSFETs)
… operation, especially in applications where Wide-Bandgap devices are used. This is because of their losses and poor control over the switching transitions. This thesis investigates various alternatives, specifically the Multi-Resonant Gate Driver (MRGD) and the Current Source Gate Driver …
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Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
… as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly selective etches, an energy band alignment favorable for high injection efficiency devices, and the absence of DX centers.
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Diamond Schottky barrier diodes
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for …
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Dielectric materials by Atomic Layer Deposition for microelectronic applications
… as high k dielectrics. These materials have been widely employed as insulator layer in the new generation of power devices, such as dynamic random access memories (DRAMs) and in metal-oxide-semiconductor field effect transistors (MOSFETs). In this context, the PhD research activity has been …
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Experimental validation of the predicted emergent magnetism in diamagnetic cadmium sulfide (Cds) doped with boron
… in dilute magnetic semiconductors. CdS is a wide band-gap semiconductor that displays large and persistent photoconductivity and is predicted to become magnetic when doped with certain dopants such as Boron[1]. In this work, we experimentally test the prediction of magnetic CdS:B, and lay …
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Growth and characterization of indium gallium phosphide on gallium arsenide by gas-source molecular beam epitaxy system and its applications to heterostructures
InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of …
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Plonasluoksnių galio nitrido dangų modifikavimas lazerine femtosekundine UV spinduliuote /
… applications. These properties include a wide band-gap (3.4 eV), high heat capacity, thermal conductivity, breakdown voltage, electron mobility, and high quantum efficiencies. These characteristics make gallium nitride invaluable in the development of light-emitting diodes (LEDs), …
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Characteristics of a New Copolymer For Bulk Heterojunction Solar Cells
… solar cells utilize tandem structure with wide band gap polymer as a front cell material and low band gap polymer as a rear cell material. Since poly(3-hexylthiophene) (P3HT) has higher band gap ~1.9 eV and absorbs the higher energy photons, it is the most frequently used front cell …
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Understanding the oxidation and reduction process in transparent conducting oxides
… and electrons. Simultaneous requirements of a wide band gap, high free carrier concentration, and high electron mobility limits the selection of available transparent conductor materials. Further improvements in the optical and electrical properties, along with improvements in processing …
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A quantum dot heterojunction photodetector
… (TPD) organic small molecule layer. The wide band gap TiO2 and TPD layers are found to block charge injection under reverse bias, yet serve as transport layers for photo-excited charge generated in the CdSe. The internal quantum efficiency is approximately 1% at zero bias and saturates at …
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Charges and Excitons in Organic and Pervoskite Light Emitting Materials and Devices
… light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40,000Hz), the semiconductor layer allows for charge …
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Design of Hybrid Inverters Using Wideband Gap Semiconductors for Microgrid Application
… future. This thesis explores the integration of wide band gap semiconductors for the power stage in these systems, along with the analysis of hybrid inverter topologies and structures. The goal of this thesis is to help as a resource with the decision process in components and design of systems …
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