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Showing 1 to 13 of 13 for “"Wide band gap semiconductor"”.
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Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides
<p>Wide band gap semiconductors and oxides have attracted much attention in the last decade because of their various applications to next generation opto- and micro-electronics. My research focuses on the process dependence of the defects and dopants in wide band gap semiconductors and oxides of …
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Experimental validation of the predicted emergent magnetism in diamagnetic cadmium sulfide (Cds) doped with boron
… persistent photoconductivity displayed by some semiconductors provides a way to control magnetism with light, through illumination-control of free carrier concentration and thereby magnetic interaction in dilute magnetic semiconductors. CdS is a wide band-gap semiconductor that displays large …
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Charges and Excitons in Organic and Pervoskite Light Emitting Materials and Devices
… light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40,000Hz), the semiconductor layer allows for charge …
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Nano-imaging to Determine the Interstitial Nature of Mn(II) Doping in 2D Halide Perovskites
… they are doped at dilute concentrations into a wide band-gap semiconductor.
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Gallium nitride MEMS resonators
As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical …
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GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology
… power electronics. Apart from being a direct and wide band-gap semiconductor which can be useful for optoelectronic devices, GaN and its alloys have other material attributes like spontaneous and piezoelectric polarization, high electron mobility, and high saturation velocity for electrons. These …
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Dye sensitized solar cells: optimization of Grätzel solar cells towards plasmonic enhanced photovoltaics
… photovoltaic processes. Currently, the most widely commercialized solar cell is based on a single p-n junction with silicon. Silicon solar cells are able to obtain high efficiencies but the downfall is, in order to achieve this performance, expensive fabrication techniques and high purity …
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Quantum control of optically active defects in the solid state
… diamond, and sapphire. Silicon carbide is a wide band-gap semiconductor with a mature manufacturing industry. In this material, we show the integration of surface defects (formed at the SiC/SiO2 interface) into microdisk resonators, showing an enhancement in single photon emission. …
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Surfaces and interfaces characterization for the development of diamond power electronic devices
… silicon have lead researchers to explore other semiconductor candidates. Diamond superior electronic and thermal properties make it a promising candidate for its application in high-power and high-frequency regime. For this reason, diamond has generated great interest to researchers in the last …
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Establishing nanoscopic structure-function relationships in the working electrodes of dye-sensitized solar cells
… which is adsorbed onto the surface of a wide-band-gap semiconductor such as TiO2, to form the working electrode. The nature by which such surfaces are sensitized stands to influence the resulting dye···TiO2 interfacial structure and thence the operational performance of the DSSC working …
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THE ROLE OF NATIVE POINT DEFECTS AND SURFACE CHEMICAL REACTIONS IN THE FORMATION OF SCHOTTKY BARRIERS AND HIGH N-TYPE DOPING IN ZINC OXIDE
… interest in recent years due to its exciting semiconductor properties and remarkable ability to grow nanostructures. As a wide band gap semiconductor, ZnO has many potential future applications including blue/UV light emitters, transparent conductors, biosensors, and electronic nanoscale …
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Novel ultra-violet/blue optoelectronic materials and devices based on copper halides (CuHa)
… research is being carried out in the area of wide band gap semiconductor materials for light emission applications in the UV/Blue (300-400 nm) spectral range. This project explores the novel use of the Copper Halides (CuHa), specifically γ-CuCl and γ-CuBr, I–VII wide band gap mixed …
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The Effect of Zr-Doping and Crystallite Size on the Mechanical Properties of TiO2 Rutile and Anatase
… material, used as white pigment, as wide band gap semiconductor in electrochemical dye solar cells, for photocatalysis and in photochemical energy-conversion processes. The most abundant phases are rutile, anatase and brookite. In addition, there are a number of metastable low density …