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Showing 1 to 20 of 59 for “"Wafer bonding"”.

  1. Ultrathin silicon wafer bonding physics and applications

    Ultrathin silicon wafer bonding is an emerging process that simplifies device fabrication, reduces manufacturing costs, increases yield, and allows the realization of novel devices. Ultrathin silicon wafers are between 3 and 200 microns thick with all the same properties of the thicker silicon …

    njit Repository record for Ultrathin silicon wafer bonding physics and applications (opens in a new tab)

  2. Micromachined infrared detector using wafer bonding technology

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.

    mit Repository record for Micromachined infrared detector using wafer bonding technology (opens in a new tab)

  3. Copper wafer bonding in three-dimensional integration

    … in integrated circuits keep shrinking. Copper wafer bonding has been considered as a strong candidate for fabrication of three-dimensional integrated circuits (3-D IC). This thesis work involves fundamental studies of copper wafer bonding and bonding performance of bonded interconnects. Copper …

    mit Repository record for Copper wafer bonding in three-dimensional integration (opens in a new tab)

  4. Wafer bonding : mechanics-based models and experiments

    Direct wafer bonding has emerged as an important technology in the manufacture of silicon-on-insulator substrates (SOI), microelectromechanical systems (MEMS), and three-dimensional integrated circuits (3D IC's). While the process is currently employed in applications such as these, a lack of …

    mit Repository record for Wafer bonding : mechanics-based models and experiments (opens in a new tab)

  5. Silicon pressure sensor using wafer bonding technology

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1993.

    mit Repository record for Silicon pressure sensor using wafer bonding technology (opens in a new tab)

  6. Three dimensional integration technology using copper wafer bonding

    … integration flow has been developed on both the wafer-and-die-level, and the enabling technologies were the following: Low temperature Cu-Cu thermocompression bonding, an aluminum-Cu based temporary laminate structure used stabilizing the handle wafer - SOI wafer bond, and tooling optimization of …

    mit Repository record for Three dimensional integration technology using copper wafer bonding (opens in a new tab)

  7. Integrated silicon pressure sensors using wafer bonding technology

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.

    mit Repository record for Integrated silicon pressure sensors using wafer bonding technology (opens in a new tab)

  8. A liquid-shear-stress sensor using wafer-bonding technology

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990.

    mit Repository record for A liquid-shear-stress sensor using wafer-bonding technology (opens in a new tab)

  9. Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology

    … grown amorphous alpha-(Ga, As) materials and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.

    uiuc Repository record for Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology (opens in a new tab)

  10. Multi-layer three-dimensional silicon electronics enabled by wafer bonding

    … silicon multi-layer stack. Low temperature wafer bonding processes, both copper thermo-compression bonding and silicon dioxide fusion bonding, are studied extensively as key enabling technology. Cu thermo-compression bonding is studied for its feasibility as a permanent bond between active …

    mit Repository record for Multi-layer three-dimensional silicon electronics enabled by wafer bonding (opens in a new tab)

  11. Near junction thermal management of GaN HEMTs via wafer bonding

    … operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate …

    mit Repository record for Near junction thermal management of GaN HEMTs via wafer bonding (opens in a new tab)

  12. Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application

    Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be …

    uiuc Repository record for Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application (opens in a new tab)

  13. Wafer bonding of processed Si CMOS VLSI and GaAs for mixed technology integration

    The successful bonding of bare thinned Si SOI wafers to bare GaAs wafers in previous research has proven to be an important first step in achieving integration of Si electronics with GaAs optoelectronic devices. The thinning of the SOI wafer has been shown to be a successful solution to the problem …

    mit Repository record for Wafer bonding of processed Si CMOS VLSI and GaAs for mixed technology integration (opens in a new tab)

  14. A thin-film silicon microaccelerometer fabricated using electrochemical etch-stop and wafer bonding technology

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.

    mit Repository record for A thin-film silicon microaccelerometer fabricated using electrochemical etch-stop and wafer bonding technology (opens in a new tab)

  15. Design and Fabrication of Long -Wavelength Vertical -Cavity Surface -Emitting Lasers Using Wafer Bonding Technologies

    … (DBR) and the fabrication complexity of direct wafer bonding. In this work, a novel VCSEL fabrication method facilitated with new wafer bonding techniques has been developed to overcome these limitations. This process scheme provides more options on the DBR and substrate materials for …

    uiuc Repository record for Design and Fabrication of Long -Wavelength Vertical -Cavity Surface -Emitting Lasers Using Wafer Bonding Technologies (opens in a new tab)

  16. Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices

    GaAs-on-silicon epitaxy techniques as well as wafer bonding GaAs to Si, have been developed to overcome lattice mismatch in order to integrate optoelectronic and Si devices. However, the thermal expansion differences between these materials continues to be a limitation in using either of these …

    mit Repository record for Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices (opens in a new tab)

  17. Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs

    … epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. …

    uiuc Repository record for Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs (opens in a new tab)

  18. An evaluation of critical issues for microhydraulic transducers : silicon wafer bonding, strength of silicon on insulator membranes and gold-tin solder bonding

    … to the development of MHT devices, are silicon wafer bonding, strength of silicon-on- insulator (SOI) membranes, and gold-tin bonding. Each of these topics was addressed independently. The mechanical integrity of silicon fusion bonds as a function of processing parameters was examined using a …

    mit Repository record for An evaluation of critical issues for microhydraulic transducers : silicon wafer bonding, strength of silicon on insulator membranes and gold-tin solder bonding (opens in a new tab)

  19. Commercialization of low temperature copper thermocompression bonding for 3D integrated circuits

    Wafer bonding is a key process and enabling technology for realization of three-dimensional integrated circuits (3DIC) with reduced interconnect delay and correspondingly increased circuit speed and decreased power dissipation, along with an improved form factor and portability. One of the most …

    mit Repository record for Commercialization of low temperature copper thermocompression bonding for 3D integrated circuits (opens in a new tab)

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