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Showing 1 to 20 of 76 for “"Wafer Scale"”.

  1. Achieving wafer scale synthesis of molybdenum ditelluride through precursor engineering

    Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2023-09-01 without embargo terms

    uiuc Repository record for Achieving wafer scale synthesis of molybdenum ditelluride through precursor engineering (opens in a new tab)

  2. Task flow: A novel approach to fine-grain wafer-scale parallel computing

    This thesis introduces a parallel computer architecture known as task flow. Simple replicated cells contain both memory packets and processing logic. Each memory packet contains a data field, the next instruction, and a link. Transmission packets flow between memory packets to communicate …

    uiuc Repository record for Task flow: A novel approach to fine-grain wafer-scale parallel computing (opens in a new tab)

  3. High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis

    … potential in realizing 3D integration. However, wafer-scale growth of high-quality, continuous 2D materials thin film with BEOL compatible temperature (<400°C) and good uniformity has always been difficult to realize. To achieve low contact resistance to these materials is also very challenging …

    mit Repository record for High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis (opens in a new tab)

  4. Electron beam techniques for testing and restructuring of wafer-scale integrated circuits

    Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1981

    mit Repository record for Electron beam techniques for testing and restructuring of wafer-scale integrated circuits (opens in a new tab)

  5. Wafer-scale integrated active silicon photonics for manipulation and conversion of light

    … by inheriting the cost-effective, very large scale integration capabilities from complementary metal-oxide-semiconductor (CMOS) process. The compatibility with CMOS also merges the electronics and photonics world in a single platform. While electronics are key for computations, photonics are …

    mit Repository record for Wafer-scale integrated active silicon photonics for manipulation and conversion of light (opens in a new tab)

  6. CMOS-Compatible Wafer-Scale Synthesis and Rapid Characterization of Two-Dimensional Transition Metal Dichalcogenides

    … manufacturing demands CMOS-compatible, wafer-scale growth and conventional CVD methods often exceed thermal budgets and introduce contaminants, while achieving uniform, defect-free monolayers remain difficult. This thesis presents in-depth discussion on low-temperature MOCVD system …

    mit Repository record for CMOS-Compatible Wafer-Scale Synthesis and Rapid Characterization of Two-Dimensional Transition Metal Dichalcogenides (opens in a new tab)

  7. Control of wafer-scale non-uniformity in chemical-mechanical planarization by face-up polishing

    … a key process in the manufacture of ultra-large-scale-integrated (ULSI) semiconductor devices. A major concern in CMP is non-uniform planarization, or polishing, at the wafer-scale - primarily as interconnect metal dishing and dielectric erosion. In conventional face-down CMP, the pad is much …

    mit Repository record for Control of wafer-scale non-uniformity in chemical-mechanical planarization by face-up polishing (opens in a new tab)

  8. LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS

    … covers the entire underlying Si substrate at the wafer scale without mesas or limited-area growth. In this presentation, we will focus on the use of n-type impurity (phosphorus) diffusing from the Si substrate and the introduction of O at the Ge-Si interface. The O is introduced by growing a thin …

    unm Repository record for LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS (opens in a new tab)

  9. A feature-to-wafer-scale model of etch-rate non-uniformity in deep reactive ion etching/

    … etch rate variation in DRIE by integrating wafer- and feature-scale nonuniformity models that are grounded on an ion-neutral synergy model for etch rate. Our method focuses on diffusive transport and local depletion of Fluorine radicals above the wafer surface to facilitate integration of …

    mit Repository record for A feature-to-wafer-scale model of etch-rate non-uniformity in deep reactive ion etching/ (opens in a new tab)

  10. Layer-by-Layer Single-crystal Two-dimensional Material Growth by Geometric Confinement

    … growth, 2) maintaining single crystallinity at wafer-scale, and 3) inevitable transfer-process to fabricate heterostructure for various next-generation applications such as spintronics, valleytronics, and optoelectronics. This thesis introduces a confined-growth technique that can overcome the …

    mit Repository record for Layer-by-Layer Single-crystal Two-dimensional Material Growth by Geometric Confinement (opens in a new tab)

  11. Development of Transition Metal Dichalcogenide Memristive Materials and Devices for Neuromorphic Systems

    … mimics synaptic functions. However, reproducible wafer-scale deposition and reliable integration into memristive devices remain key challenges. This work investigates the three representative TMDCs molybdenum disulfide, hafnium disulfide, and tungsten disulfide, selected to reflect contrasts in …

    cau-kiel Repository record for Development of Transition Metal Dichalcogenide Memristive Materials and Devices for Neuromorphic Systems (opens in a new tab)

  12. Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels

    … crystal silicon (Si) for high-strength macro-scale application and determines its practical advantages when compared to conventional approaches. The major contributions of this thesis includes evaluation of wafer-scale silicon for macro-world applications, identification of cellular pressure …

    mit Repository record for Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels (opens in a new tab)

  13. Analysis of slurry flow in chemical-mechanical polishing

    … is non-uniform polishing rate at the die and wafer scales. In this thesis, an innovative CMP machine configuration is proposed to minimize wafer-scale non-uniformity. The new face-up machine lowers wafer-scale non-uniformity by minimizing over-polishing of any particular area. The thesis …

    mit Repository record for Analysis of slurry flow in chemical-mechanical polishing (opens in a new tab)

  14. Wafer bonding : mechanics-based models and experiments

    Direct wafer bonding has emerged as an important technology in the manufacture of silicon-on-insulator substrates (SOI), microelectromechanical systems (MEMS), and three-dimensional integrated circuits (3D IC's). While the process is currently employed in applications such as these, a lack of …

    mit Repository record for Wafer bonding : mechanics-based models and experiments (opens in a new tab)

  15. Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2

    … MoS2, obtaining a single-crystal phase with a wafer-scale uniform monolayer is needed in order for the material to be mass fabricated. Although wafer scale monolayer MoS2 has successfully been grown, it contained a high density of grain boundaries which would cause non-uniform performance when …

    uiuc Repository record for Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2 (opens in a new tab)

  16. Atomic-scale assessment of graphene-substrate interactions, grain boundaries, and materials for heterostructures

    … nanoelectronic devices, primarily defects from wafer-scale graphene synthesis, graphene-substrate interactions, and growth of graphene’s insulating analog, hexagonal boron nitride (h-BN). These experimental studies are fundamental in nature, but they highlight parameters relevant to …

    uiuc Repository record for Atomic-scale assessment of graphene-substrate interactions, grain boundaries, and materials for heterostructures (opens in a new tab)

  17. Array-based planar nanowire high electron mobility transistor

    … fabricating bottom-up NW-FETs and circuits in wafer-scale is still in question. The main challenges include: controllability of NW position, uniformity of NW electrical property, and compatibility with planar processing. In this thesis research, a bottom-up planar-NW high electron mobility …

    uiuc Repository record for Array-based planar nanowire high electron mobility transistor (opens in a new tab)

  18. Network-on-chip design for a chiplet-based waferscale processor

    … architectural changes to enable performance to scale acceptably. One significant architectural change is the shift from bus and crossbar based processor interconnections to networks-on-chip (NoCs). This thesis details the design of an NoC to enable a shared memory architecture in a chiplet-based …

    uiuc Repository record for Network-on-chip design for a chiplet-based waferscale processor (opens in a new tab)

  19. Nonplanar Nanofabrication via Interface Engineering

    … achieve. Our approach, which builds on standard, wafer-scale, and conventionally-compatible techniques, is versatile, tunable, and compatible with diverse materials. As a result, the technique opens up new opportunities for applications such as miniaturized nanoelectromechanical devices, including …

    mit Repository record for Nonplanar Nanofabrication via Interface Engineering (opens in a new tab)

  20. Planar nanowire high electron mobility transistor and down-scaling of planar nanowire

    … done for the realization of high-quality down-scaled planar GaAs NWs with widths as small as 35 nm. With further development of our planar NW technology, wafer-scale low-power and high-speed VLSI circuits involving 3D planar NW channel from the bottom-up is promising.

    uiuc Repository record for Planar nanowire high electron mobility transistor and down-scaling of planar nanowire (opens in a new tab)

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