Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 5 of 5 for “"Vertical Cavity Transistor Laser"”.
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Development of vertical cavity transistor laser and microcavity laser
An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per …
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Development of high-speed vertical-cavity surface-emitting diode laser and vertical-cavity transistor laser for shortreach optical interconnects
Commercialization of vertical-cavity surface-emitting lasers (VCSELs) in the mid-1990s replaced light-emitting diodes and provided more reliable and cost-effective optical interconnects (OIs) with improved data rate from 100 Mb/s to 1 Gb/s. The transition from proton isolated VCSEL to oxide …
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Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser
High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a …
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Microwave characterization of vertical cavity surface emitting diode laser and transistor laser
Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The …
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Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advantages such as fast base spontaneous recombination lifetime, high differential optical gain, and low carrier injection density. Due to these characteristics, we have demonstrated that the TL is able to …