Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 11 of 11 for “"Vapor-liquid-solid (VLS)"”.
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Vapor-liquid-solid (VLS) growth of lead chalcogenide thin films for infrared sensing applications
… modest cooling requirements. Adapting the vapour-liquid-solid (VLS) growth mechanism traditionally used for growing nanowires to growing PbSe thin films circumvents the very slow adsorption of a gas phase into a solid surface by introducing a catalytic liquid alloy phase, while simultaneously …
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Optical properties of SiGe nanostructures
… measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations are reported. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman …
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Quantitative Fracture Strength of Lithiated Tin Oxide Nanowires by In-Situ SEM Tensile Experiments
… The SnO2 nanowires were synthesized using the vapor-liquid-solid (VLS) growth mechanism on stainless steel substrates using a gold (Au) catalyst. Ex-situ lithiation of the SnO2 nanowires was performed directly using the stainless steel growth substrates by the electrochemical half-cell method …
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Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate
<p>Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible …
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Array-based planar nanowire high electron mobility transistor
… digital/RF IC. Bottom-up grown NWs via the vapor-liquid-solid (VLS) mechanism are of particular interest for NW-FET application because the as-grown 3D NW structures require no lithography or chemical etching to define. However, fabricating bottom-up NW-FETs and circuits in wafer-scale is …
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Fundamental studies on surface chemistry and interfacial interactions of nanoscale heterostructures for chemical sensing, photocatalysis, and thermal transport management
… surface chemistry: fabrication (Chemical Vapor Deposition or CVD) and controlled patterning of graphene encapsulated gold nanoparticles (referred as graphene nanoparticles or GNPs) on silicon substrate and their surface functionalization with DNA, external nanoparticles, or semiconducting …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… dissertation provides a comprehensive study on vapor-liquid-solid (VLS) growth of III-V planar nanowires and their electronic device applications. III-V materials, especially high-In-content InGaAs, are considered as a very promising n-channel material candidate for post-Si complementary …
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Structure/processing relationships in vapor-liquid-solid nanowire epitaxy
The synthesis of Si and III-V nanowires using the vapor-liquid-solid (VLS) growth mechanism and low-cost Si substrates was investigated. The VLS mechanism allows fabrication of heterostructures which are not readily attainable using traditional thin-film metalorganic chemical vapor deposition …
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Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices
The Vapor-Liquid-Solid (VLS) mechanism is a bottom-up approach to produce one-dimensional semiconductor structures, or nanowires. VLS nanowires are formed via a chemical or physical deposition process, where a metallic nanoparticle (seed) facilitates the growth. Nanowire growth diameter is strongly …
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Growth and applicability of radiation-responsive silica nanowires
… processes on the nanoscale. Nanowire growth via vapor-liquid-solid (VLS) mechanism is no exception in this regard. Interfacial and line energies are found to impose some fundamental limits during three-phase nanowire growth and lead to formation of stranded nanowires with fascinating …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …