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Showing 1 to 13 of 13 for “"Vacancy defects"”.
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The Annealing of Quenched-in Vacancy Defects in Gold
Made available in DSpace on 2014-12-10T17:57:40Z (GMT). No. of bitstreams: 1 6500941.pdf: 2132549 bytes, checksum: 93fc49c5234a8b4dcc73411ce3294719 (MD5) Previous issue date: 1964
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Effects of Surface Oxidation on Vacancy Defects in Beta Nickel-Aluminum Alloys
Transmission Electron Microscopy and Auger Electron Spectroscopy has been used to make observations of the oxidation process in (beta)-NiAl alloys annealed under controlled conditions of temperature and oxygen partial pressure. Binary Ni-Al alloys, with nominally 47.5, 50.4 and 52.5 at .% Al, were …
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All-optical method of nanoscale magnetometry for ensembles of nitrogen-vacancy defects in diamond
The Nitrogen-Vacancy (NV) defect in diamond has shown considerable promise in the field of small scale magnetometry due to its high localization and retention of favorable optical properties at ambient conditions. Current methods of magnetometry with the NV center achieve high sensitivity to fields …
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Mechanisms for triggering high-voltage breakdown in vacuum
… arise from radiative electron-recombination at vacancy-defects and substitutional impurity centres within the surface-layers of the ceramic. The physical nature of vacancy-defects within an alumina dielectric is extensively explored, with a particular focus placed upon the trapped electron …
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First principles-based atomistic modeling of the structural properties of silicon-oxide nanomaterials
… growth and structure of self-interstitial and vacancy clusters in silicon and the effect of strain on the structure and stability of the defect clusters. Our work for vacancy clusters suggests that small vacancy defects exclusively favor fourfold-coordination thermodynamically with no …
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Positron Annihilation Lifetime Spectroscopy Methodology and Application to Perovskite Oxide Materials
… in the fraction of trapping to A-site related vacancy defects. The onset of a reduction in the average lifetime between Gd and Dy provides evidence for a change in the doping mechanism resulting in a relative reduction in the fraction of A-site vacancy positron trapping. <br/><br/>In contrast …
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Linear-Scaling Density Functional Theory and Theoretical Electron Energy Loss Spectroscopy Investigations of Surfaces and Defects in Nanomaterials
… to predict the spectra associated with oxygen vacancy defects in the anatase (101) surface. These spectra are found to agree with the limited experimental data available. EEL spectra for nitrogen dopants in anatase are also predicted, based on literature geometries for these. The energetics of …
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Removal of Per- and Poly-fluoroalkyl Substances (PFAS) from Water: A Computational Approach
… favorable on the (110) facet and enhanced by vacancy defects, while pre-adsorbed hydrogen reduces adsorption stability. Zero-valent iron (Fe0) demonstrates superior and facet-independent adsorption affinity, particularly for sulfonated PFAS, and exhibits catalytic activity toward sulfonic …
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Electron beam generation and structure of defects in carbon and boron nitride nanotubes
The nature and role of defects is of primary importance to understand the physical properties of C and BN single walled nanotubes. Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron …
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Quantum control of optically active defects in the solid state
… of atoms in the solid state, referred to as defects, have historically been deemed undesirable as they can be deleterious to the operation of electronic and optoelectronic devices. In 1997, it was demonstrated that a single nitrogen-vacancy (NV) center defect in diamond could act as a stable …
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Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory
Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs). The continuous scaling of CMOS has brought the Si MOSFET to its physical technology limit and the …
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Density Functional Theory Study of Two-Dimensional Boron Nitride Films
… defect states, and structure) of point charged defects in monolayer and bilayer hexagonal boron nitride, and subsequently, I focused on the linear and nonlinear mechanical properties of boron nitride films with sp2 and sp3 bonding structures.</p> <p>Experimental detection and characterization of …
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Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
… have brought dramatic reductions in structural defects, such as misfit dislocations, that are strong carrier scatters and major device failure factors. However, despite the remarkable success in the growth of Type-II SLSs (T2SLs) in the form of dislocation-free thick layers, theoretical promises …