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Showing 1 to 1 of 1 for “"V-N-O"”.
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Nucleation and Growth of Defects in Nitrogen doped Silicon
Ultra high purity silicon is advantageously modified by as low as 5x10¹⁴ cm⁻³ nitrogen. Such a doping level was proved to drastically impact grown-in and process-induced defects, enhances the denuded zone intended for making devices, improves impurity gettering, and increases the gate oxide …