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Showing 1 to 2 of 2 for “"Unclamped Inductive Switching"”.
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… cascode GaN HEMTs in single-event and repetitive unclamped inductive switching (UIS) tests. The cascode was found to withstand surge energy by the overvoltage capability of the GaN HEMT, accompanied by an avalanche in the Si MOSFET. In single-event UIS tests, the cascode failed in the GaN HEMT at …
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Robustness of Gallium Nitride Power Devices
… study begins with conducting the single-event unclamped inductive switching (UIS) test on two mainstream commercial p-gate GaN HEMTs with the Ohmic- and Schottky-type gate contacts, where the GaN HEMT is found to withstand surge energy through a resonant energy transfer between the device …