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Showing 1 to 2 of 2 for “"Ultrawide Bandgap Semiconductor"”.
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Advancements in Hexagonal Boron Nitride for Thermal Neutron Detection Applications
… Some of these properties include extremely wide bandgap, strong optical absorption of above bandgap photons, a layered structure with a close lattice match to graphite, and critical to this research effort, a large thermal neutron capture cross section when 100% isotopically enriched with 10B. …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy …