Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 5 of 5 for “"Ultrathin oxide"”.
-
CO oxidation on metal supported ultrathin oxide films
… durch der Ablagerung der fremden Übergangsmetalloxide auf dem Einzelkristall des stützendes Metals oder durch Oxidation des Substratmaterials unter den gut kontrollierten Bedienungen im Ultrahoch-Vakuum hergestellt. Die Filmstruktur und Zusammensetzung wurden anhand der "low energy electron …
-
Reactivity of Oxide Surfaces and Metal-Oxide Interfaces: Effects of Water Vapor Pressure on Ultrathin Aluminum Oxide Films, and Studies of Platinum Growth Modes on Ultrathin Oxide Films and Their Effects on Adhesion
The reactivity of oxide surfaces and metal-oxide interfaces play an important role in many technological applications such as corrosion, heterogeneous catalysis, and microelectronics. The focus of this research was (1) understanding the effects of water vapor exposure of ultrathin aluminum oxide …
-
Van der Waals Heterostructures and 2D Materials with Native Oxide for Emerging Electronic Applications
… paradigms, reliant on complementary metal-oxide-semiconductor (CMOS) transistors, are becoming more inadequate for meeting these emerging demands due to limitations imposed by materials characteristics and device architecture. To address this computational paradigm shift, an innovative …
-
Singlet exciton fission-enhanced silicon photovoltaics: Interfacial engineering, device design and spectroscopic technique development
… near- silicon band edge states, and an ultrathin oxide chemical passivation layer. We then study various device architectures, confirming the importance of using a device designed to extract surface charge carriers efficiently, demonstrating the first enhancements in single-junction …
-
Characterization of ultrathin gate dielectrics and multilayer charge injection barriers
… of the gate dielectric, SiO_2, of a MOSFET. Gate oxides in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a reevaluation of the continued usefulness of …