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Showing 1 to 12 of 12 for “"Ultra-Wide Bandgap"”.
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
Ultra-wide bandgap (UWBG) semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of …
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Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module
… carrier concentration, dictated primarily by the bandgap of the material, which increases with temperature. Wide-bandgap (WBG) power semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN), have been adopted for use in these applications, but exhibit a degradation in performance …
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Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Metal-assisted chemical etching of β-gallium oxide
β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier …
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Band Offset Measurements of ε-(InxGa1-x)2O3/AlN using X-ray Photoelectron Spectroscopy
… advanced electronic applications, such as deep ultraviolet photodetectors, high-electron-mobility transistors, and high-power electronic devices, InGaO/AlN heterojunctions hold significant promise due to their ultra-wide band gap, tunable polarization properties, and optimized spectral response. …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
… optoelectronics from the infrared to the deep ultraviolet wavelengths. Low-bandgap, high indium content III-nitride materials are investigated for longer wavelength applications. High indium incorporation into the crystal is achieved via plasma-assisted molecular beam epitaxy (PAMBE) at low …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
In the recent past, ultra-wide bandgap β-Ga2O3 has drawn a significant amount of attention as an emerging wide bandgap semiconductor because of its promising material properties, for example, large bandgap (~ 4.9 eV), high electric breakdown field (~ 8 MVcm-1), hard radiation tolerance, physical …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 …
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Ultraviolet triggering and characterization of diamond photoconductive semiconductor switches for advanced high-power, high-speed applications
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms
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Diamond seeding process for the heterogenous integration of high quality diamond on semiconductors
… grown by chemical vapor deposition (CVD) have a wide band gap, high hardness, chemical inertness, and high thermal conductivity, making them an attractive material for a wide range of applications. Due to high surface energy and low sticking probability of diamond, it is difficult to grow thick …
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Hybrid-gate deep depletion mosfet high-k zro2/diamond-based power devices
… green electronic systems will be reached by wide band gap or ultra wide band gap semiconductors since they can provide larger blocking capabilities, higher performance-cost ratios and they can reduce the thermal requirements. Among the candidates, diamond is found to be the ultimate material …