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Showing 1 to 2 of 2 for “"Type-II DHBTs"”.

  1. Development of electrical and optical devices for next generation high-speed optical interconnects

    … electronic devices such as InP based Type-II DHBTs. Meanwhile, cryogenic and quantum computing demand ultra-efficient links bridging cryogenic processors to room-temperature peripheral electronics; Cryo-VCSELs offer ~100 GHz bandwidth at few milliampere bias range and enable >448-Gb/s …

    uiuc Repository record for Development of electrical and optical devices for next generation high-speed optical interconnects (opens in a new tab)

  2. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

    … and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this …

    uiuc Repository record for Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications (opens in a new tab)