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Showing 1 to 2 of 2 for “"Type-I DHBTs"”.

  1. Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications

    … suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown …

    uiuc Repository record for Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications (opens in a new tab)

  2. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

    … the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of …

    uiuc Repository record for Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications (opens in a new tab)