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Showing 1 to 2 of 2 for “"Type-I/II DHBTs"”.
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Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications
… suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown …
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Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
… and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this …