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Showing 1 to 20 of 85 for “"Tunnel junctions"”.

  1. Memristive tunnel junctions

    … In the first chapter, we reveal that magnetic tunnel junctions fit in the recently emerged field of memristors and memristive systems. We describe how this 'hot topic' emerged from the combination of two research fields and take a step further by including magnetic systems. The somewhat …

    bielefeld Repository record for Memristive tunnel junctions (opens in a new tab)

  2. Tunneling spectroscopy of magnetic tunnel junctions

    In this thesis, magnetic tunnel junctions based on MgO barriers have been prepared and investigated. Different aspects were discussed, in order to understand the physical limitations to the TMR ratio of the MTJs and, hence, their performance as a basis of spintronic devices.

    bielefeld Repository record for Tunneling spectroscopy of magnetic tunnel junctions (opens in a new tab)

  3. FUNCTIONAL REDOX-ACTIVE MOLECULAR TUNNEL JUNCTIONS

    … This thesis focuses on the functional molecular junctions based on redox-active molecules and describes the relationship between the change of redox-states and how it affects the mechanism of charge transport and the electronic/supramolecular structures of the junctions. This thesis provides new …

    nus Repository record for FUNCTIONAL REDOX-ACTIVE MOLECULAR TUNNEL JUNCTIONS (opens in a new tab)

  4. Cobalt-based Heusler compounds in magnetic tunnel junctions

    … of many spintronic devices is the magnetic tunnel junction (MTJ) where two ferromagnets are separated by a thin insulating tunnel barrier. The resistance of such a device depends on the magnetic orientation of the ferromagnets. Usually, R_AP (antiparallel) is higher than R_P (parallel) and a …

    bielefeld Repository record for Cobalt-based Heusler compounds in magnetic tunnel junctions (opens in a new tab)

  5. Stochastic In-memory Computing Using Magnetic Tunnel Junctions

    … – stochastic in-memory computing using magnetic tunnel junctions. By introducing thermally stable and unstable magnetic tunnel junctions as CMOS-compatible circuit building blocks, both general-purpose and application-specific in-memory computing accelerators can be synthesized, providing a …

    mit Repository record for Stochastic In-memory Computing Using Magnetic Tunnel Junctions (opens in a new tab)

  6. Correlated electron transport across atomic and molecular tunnel junctions

    … for alkane-based and silane-based molecular junctions utilising both thiol and amine linker molecules. In addition, components of the method such as electrostatic behaviour and screening, electronegativity, sensitivity to boundary conditions, and the level of treatment of electron correlation …

    cork Repository record for Correlated electron transport across atomic and molecular tunnel junctions (opens in a new tab)

  7. Phonon and quasiparticle dynamics in superconducting aluminum tunnel junctions

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T20:33:37Z No. of bitstreams: 1 1975_smith.pdf: 2937209 bytes, checksum: a366e37feb82eba87e80ccc35b07cbd7 (MD5)

    uiuc Repository record for Phonon and quasiparticle dynamics in superconducting aluminum tunnel junctions (opens in a new tab)

  8. A study of surface roughness issues in magnetic tunnel junctions

    This research focuses on the spin-dependent tunneling phenomenon in magnetic tunnel junction. Based on the free electron model, it is found that the tunneling magnetoresistance and the exchange coupling are greatly modified by introducing the interface roughness into the basic …

    nus Repository record for A study of surface roughness issues in magnetic tunnel junctions (opens in a new tab)

  9. Investigation of half-metallic ferromagnetism in NiMnSb spin dependent tunnel junctions

    Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.

    mit Repository record for Investigation of half-metallic ferromagnetism in NiMnSb spin dependent tunnel junctions (opens in a new tab)

  10. N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP

    … from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey.

    cornell Repository record for N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP (opens in a new tab)

  11. The current-voltage characteristics of linear chains of submicron Josephson tunnel junctions

    The recent experimental results on granular superconducting films have suggested an universal sheet resistance threshold of 6.4 k$\Omega$/square, below which all films become superconducting with decreasing temperature, and above which all films become insulating with decreasing temperature. At the …

    uiuc Repository record for The current-voltage characteristics of linear chains of submicron Josephson tunnel junctions (opens in a new tab)

  12. A study of Nb3(Al.75Ge.25) and V3Au superconducting tunnel junctions.

    Massachusetts Institute of Technology. Dept. of Metallurgy and Materials Science. Thesis. 1973. B.S.

    mit Repository record for A study of Nb3(Al.75Ge.25) and V3Au superconducting tunnel junctions. (opens in a new tab)

  13. Superparamagnetic Tunnel Junctions for Reliable True Randomness and Efficient Probabilistic Machine Learning

    … hardware security. Recently, superparamagnetic tunnel junctions (sMTJs) have been widely explored for such purposes, leading to the development of limited-scale sMTJ-based systems. Existing sMTJs face significant scalability and reliability issues, however, because their intrinsically low energy …

    mit Repository record for Superparamagnetic Tunnel Junctions for Reliable True Randomness and Efficient Probabilistic Machine Learning (opens in a new tab)

  14. Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices

    … devices. Wide-bandgap GaN homojunction tunnel junctions are investigated to enhance shorter wavelength optoelectronics. Extreme n- and p-type doping is established with carrier concentrations above 1x1020 cm-3, which is essential to form tunnel junctions in such a wide bandgap material. …

    gatech Repository record for Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices (opens in a new tab)

  15. High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions

    "Tunnel junctions were fabricated oil the grown-oxides of both cleaved single-crystal silicon and evaported aluminum and have been studied over a wide bias range. At low biases the previously reported inelastic and selfenergy structure is observed, while at intermediate biases tunneling into …

    uiuc Repository record for High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions (opens in a new tab)

  16. INVESTIGATION OF MATERIALS AND ANALYSIS TECHNIQUES FOR PERFORMANCE ENHANCEMENT OF PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

    Perpendicular Magnetic tunnel junction (p-MTJ) is a promising candidate for future non-volatile memories. Some of the factors that are critical for the performance of p-MTJ are thermal stability, magnetic immunity against the external magnetic field and switching current (Ic). In this thesis, the …

    nus Repository record for INVESTIGATION OF MATERIALS AND ANALYSIS TECHNIQUES FOR PERFORMANCE ENHANCEMENT OF PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS (opens in a new tab)

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