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Showing 1 to 7 of 7 for “"Tunnel Field-Effect Transistors"”.
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First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys
… of the silicon metal–oxide–semiconductor (MOS) field-effect transistor (FET) and the demand for energy-efficient appliances motivate the study of alternative devices. The device under consideration is the biaxial tensile-strained Germanium on InGaAs alloy tunnel FET (TFET). The type of device …
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF-ratio in today's integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due …
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Ultra-scaled III-V Vertical Tunneling Transistors
In the quest of reducing the power consumption of transistors, charge carrier transport mechanisms other than thermionic emission over an energy barrier have received considerable attention. Among all possible mechanisms, quantum mechanical tunneling has emerged as one of the most promising, and …
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… such as group IV and III-V materials and tunnel field-effect transistors (TFETs), have been proposed as solutions for the beyond Si era. TFETs benefit from steep switching characteristics due to the band-to-band tunneling injection of carriers from source to channel. Moreover, the narrow …
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Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
… and steep subthreshold swing devices such as tunnel field effect transistors (TFETs). This work evaluates both approaches utilizing germanium (Ge) and strained-Ge as a material to understand the benefits and drawbacks to both approaches. Hypothetically, high carrier mobility and velocity …
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Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits
… from the component to the circuit level. An effective approach to reduce power dissipation has been a continual reduction in operating voltage, thereby quadratically down-scaling active power dissipation. However, as state-of-the-art silicon (Si) complimentary metal-oxide-semiconductor (CMOS) …
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… existing Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are rapidly approaching the physical limits of their scaling potential. New material innovations, such as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel …