Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 4 of 4 for “"Tunnel Field-Effect Transistor"”.
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Tensile-Strained Ge/III-V Heterostructures for Low-Power Nanoelectronic Devices
… substantial progress in materials science and transistor design, the integrated circuit has seen continual performance improvements and simultaneous reductions in operating power (VDD). Nevertheless, existing Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are rapidly …
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Interband quantum tunneling at the band-edges in III-V semiconductor heterojunctions for low-power logic and detectors
This thesis explores interband tunneling in semiconductor heterojunctions where a density-of-states switching mechanism can be used to sharply modulate the junction conductance using small applied voltages via alignment and misalignment of the band-edges. Such a mechanism is useful for the pursuit …
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Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
… device densities and advances in materials and transistor design, integrated circuit (IC) performance has continued to improve while operational power (VDD) has been substantially reduced. However, as feature sizes approach the atomic length scale, fundamental limitations in switching …
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF-ratio in today's integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due …