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Showing 1 to 3 of 3 for “"Trench MOSFET"”.
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Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
… a 50% reduction from the conventional trench MOSFET. The only draw back with this new device is that the body diode power loss has increased significantly. There are two principal goals of this research. The first is to reduce the body diode reverse recovery characteristics of a 30V …
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Third Quadrant Operation of 1.2-10 kV SiC Power MOSFETs
… field-effect-transistors (MOSFETs), there are two current paths in the 3rd-quad conduction, namely the MOS channel path and the body diode path. It is well known that, for 1.2 kV silicon carbide (SiC) planar MOSFETs, the conduction loss in the 3rd-quad is reduced by turning …
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Optimization of Power MOSFET for High-Frequency Synchronous Buck Converter
… high frequency also causes more power loss on MOSFETs. Optimization of the MOSFETs plays an important role in the system performance. Circuit and device modeling is important in understanding the relationship between the device parameters and the power loss. The gate-to-drain charge (Qgd) is …